RADECS 97. Fourth European Conference on Radiation and Its Effects on Components and Systems (Cat. No.97TH8294)
DOI: 10.1109/radecs.1997.699001
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Study of radiation effects on low voltage memories

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Cited by 7 publications
(2 citation statements)
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“…Concerning the cell radiation sensitivity, if large amounts of stored charge are used with large feature sizes [120], [121], as is the case for rad-hard memories, there are effectively no upsets with heavy ions [16]. This is true both for the rad-hard SONOS memories on the market and for old floating gate cells, where heavy-ion strikes could not cause significant discharges.…”
Section: B Charge Trap Memoriesmentioning
confidence: 99%
“…Concerning the cell radiation sensitivity, if large amounts of stored charge are used with large feature sizes [120], [121], as is the case for rad-hard memories, there are effectively no upsets with heavy ions [16]. This is true both for the rad-hard SONOS memories on the market and for old floating gate cells, where heavy-ion strikes could not cause significant discharges.…”
Section: B Charge Trap Memoriesmentioning
confidence: 99%
“…[7] Functional test patterns are designed based on the characteristics of the above functional failure modes, and the most used functional test patterns in total dose hardness assurance testing of SRAM are Solid and Checkerboard designed for stuck-at faults (test vectors running to memory are called test patterns). [8][9][10][11] But to the best of our knowledge, there is no study that demonstrates that the functional failure modes of SRAM induced by irradiation are stuck-at faults, so that the hardness of the device may be overestimated by the Solid and Checkerboard. Functional failure modes classification of SRAM discussed above is aimed at functional failure caused by physical defects, such as void in vias between metal layers.…”
Section: Introductionmentioning
confidence: 99%