Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

Zheng, Qiwen; Cui, Jiangwei; Zhou, Hang; Yu, Dan; Yu, Xuefeng; Lü, Wei; Guo, Qi; Ren, Dazhong

doi:10.1088/1674-1056/24/10/106106

Cited by 6 publications

(2 citation statements)

References 23 publications

(14 reference statements)

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“…The impact of TID on the stability of SRAM cell has been investigated for several decades. [3][4][5][6][7][8][9][10][11][12][13] TID will result in a preferred state and non-preferred state in SRAM cell. That is, SNM of data applied on cell during TID exposure is increased, whereas SNM of TID complement data is decreased.…”

Section: Introductionmentioning

confidence: 99%

“…In general, SNM of SRAM before and after TID irradiation is determined by circuit simulation with the irradiated transistor model. [6,[9][10][11][12][13] Simulation results are experimentally verified by single event upset (SEU) characterization [3,[5][6][7][8] or background data [4,11] testing indirectly, according to the relationship between SNM and SEU cross section, and background data distribution. TID induced asymmetry in SRAM cell stability is experimentally verified by unbalanced SEU cross section for TID data and TID complement data, and TID pattern imprinting in background data.…”

Section: Introductionmentioning

confidence: 99%

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Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin*

Zheng¹,

Cui²,

Liu³

et al. 2017

Chinese Phys. B

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In this work, the total ionizing dose (TID) effect on 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memory (SRAM) cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin (SNM) is specifically designed and irradiated by gamma-ray. Both data sides’ SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side’s SNM is decreased and the other data side’s SNM is increased. Moreover, measurement of SNM under different supply voltages (V dd) reveals that SNM is more sensitive to TID under lower V dd. The impact of TID on SNM under data retention V dd should be tested, because V dd of SRAM cell under data retention mode is lower than normal V dd. The mechanism under the above results is analyzed by measurement of I—V characteristics of SRAM cell transistors.

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