Study of secondary electron emission from semiconductors induced by electrons from 20 eV to 800 eV and surface state of semiconductors

Xie, Ai-Gen; Yu, Yang; Song, Chen-Nan; Chen, Ya-Yi

doi:10.1016/j.rinp.2019.102724

Cited by 2 publications

(2 citation statements)

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“…( 29) is n h−H (i.e., n h−H of Eq. ( 29) is a constant) and the relations among δ m , E pom , n(E pom ), and R(E pom ), [39][40][41][42] we know that when we take δ H in Eq. ( 29) to be δ m , the H, n, and R H of Eq.…”

Section: Relations Among Parametersmentioning

confidence: 99%

“…Because λ of an insulator is of the order of 100 Å, [8,34,42] i.e., λ hot of an insulator due to primary electrons is of the order of 100 Å, the hot electrons excited by primary electrons in an insulator mainly lose energy by electron-electron interaction as those in a NEASLD do, and χ of an insulator is very low or equal to 0. [48] Thus, λ hot of a NEASLD due to primary electrons is also of the order of 100 Å.…”

Section: See and Photoemissionmentioning

confidence: 99%

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Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

Xie¹,

Dong²,

Liu³

2023

Chinese Phys. B

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The formulas for parameters of negative electron affinity semiconductor NEAS with large λ NEASLD are deduced, respectively, λ is the mean escape depth of secondary electrons; And the methods of obtaining parameters such as λ, B, E pom, maximum δ and δ at 100.0 keV≥E po≥1.0 keV of NEASLD with the deduced formulas are presented, respectively, where B is the probability that an internal secondary electron escapes into vacuum upon reaching the emission surface of emitter, δ is secondary electron yield, E po is incident energy of primary electron, E pom is the E po corresponding to maximum δ. The parameters obtained here were analyzed, it can be concluded that several parameters of NEASLD obtained by the methods presented here agree with those obtained by other authors. The relation between secondary electron emission and photo-emission from NEAS with large mean escape depth of excited electrons is investigated, it concludes that the presented method of obtaining λ is a more accurate method of obtaining corresponding parameter of NEAS with large λph, and that the presented method of calculating B at E po > 10.0 keV is a more widely applicable method of obtaining corresponding parameter of NEAS with large λph, λph is the mean escape depth of photo-electrons.

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Section: Relations Among Parametersmentioning

confidence: 99%

Section: See and Photoemissionmentioning

confidence: 99%

Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

Xie¹,

Dong²,

Liu³

2023

Chinese Phys. B

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Monte Carlo simulation of secondary electron emission from an N2-adsorbed layer on a Cu surface

Zhang

et al. 2020

Results in Physics

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Study of secondary electron emission from semiconductors induced by electrons from 20 eV to 800 eV and surface state of semiconductors

Cited by 2 publications

References 43 publications

Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

Monte Carlo simulation of secondary electron emission from an N2-adsorbed layer on a Cu surface

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Study of secondary electron emission from semiconductors induced by electrons from 20 eV to 800 eV and surface state of semiconductors

Cited by 2 publications

References 43 publications

Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

Monte Carlo simulation of secondary electron emission from an N2-adsorbed layer on a Cu surface

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Study of secondary electron emission from semiconductors induced by electrons from 20 eV to 800 eV and surface state of semiconductors