Study of SF6and SF6/O2plasmas in a hollow cathode reactive ion etching reactor using Langmuir probe and optical emission spectroscopy techniques

Pessoa, Rodrigo Sávio; Tezani, Leandro L.; Maciel, Homero Santiago; Filho, Gilberto Petraconi; Massi, M.

doi:10.1088/0963-0252/19/2/025013

Cited by 18 publications

(12 citation statements)

References 22 publications

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“…However, this drop in the electron temperature would probably be canceled out by the effects of O 2 . Based on previous measurements on this reactor [33] and elsewhere [49,50], the electron temperature would increase with the addition of O 2 to the feedstock. Also, the electron density would probably increase with the addition of O 2 , however previous findings indicate only small variations of the electron density for an…”

Section: Dissociation Fractions In Sf 6 /O 2 /Ar and Sf 6 /Ar Dischargesmentioning

confidence: 89%

Investigation of absolute atomic fluorine density in a capacitively coupled SF₆/O₂/Ar and SF₆/Ar discharge

Kechkar

Babu

Swift

et al. 2014

Plasma Sources Sci. Technol.

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Detection of fluorine atoms in a capacitively coupled SF 6 /O 2 /Ar discharge has been achieved using appearance potential mass spectrometry (APMS). Atomic fluorine density, [F], variation with power in the range of 50-300 W was found to saturate. The dissociation fraction for a fixed gas pressure of 40 mTorr and a feedstock mix of SF 6 /O 2 /Ar (85/10/5%) ranged from 3.0 × 10 −4 -2.4 × 10 −3 . The addition of O 2 to SF 6 plasma was shown to have a significant effect on [F]. The dissociation fraction in SF 6 /Ar (95/5%) plasma at 20 mTorr was over a factor of 22 lower than SF 6 /O 2 /Ar (85/10/5%) plasma. For a fixed gas pressure and power of 60 mTorr and 500 W the F + signal showed a variation of up to a factor of 60 depending if O 2 was in the feedstock gas which indicates a marked enhancement of [F] with O 2 addition. Fluorine actinometry was also used to monitor relative fluorine atom concentrations. A comparison of actinometry with APMS showed that a classical actinometric approach for measuring fluorine atoms was unreliable for the conditions examined in this work. Over the power range investigated the absolute fluorine concentration increased by a factor of 10 whereas the actinometric signal only showed a two fold increase.

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Section: Dissociation Fractions In Sf 6 /O 2 /Ar and Sf 6 /Ar Dischargesmentioning

confidence: 89%

Investigation of absolute atomic fluorine density in a capacitively coupled SF₆/O₂/Ar and SF₆/Ar discharge

Kechkar

Babu

Swift

et al. 2014

Plasma Sources Sci. Technol.

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“…This level may be related to the OH groups adsorbed on the surface of the films [44,52]. Furthermore, the γ level may also be related to Si impurity, which secretes from the substrate to the film [44,53]. Nevertheless, this latter possibility is unlikely, since the Si segregation was observed only in materials submitted to temperatures exceeding 800 • C [44].…”

Section: Optical and Electrical Propertiesmentioning

confidence: 99%

Black TiO2 Thin Films Production Using Hollow Cathode Hydrogen Plasma Treatment: Synthesis, Material Characteristics and Photocatalytic Activity

et al. 2020

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Black TiO2 materials have been quite widely explored due to their large solar absorption and superior photocatalytic activity. In this paper, the blackening process of titanium dioxide (TiO2) thin film using the hollow cathode hydrogen plasma (HCHP) technique is reported. First, pristine anatase TiO2 films were grown by magnetron sputtering onto silicon and cover glass substrates and then annealed at 450 °C for 2 h. Then, the as-grown TiO2 films were treated with HCHP for 15 min. The physical, chemical and morphological properties of the films were analyzed by profilometry, X-ray diffraction (XRD), UV-Vis spectrophotometry, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) techniques. Electrical and photocatalytic measurements were performed by four-point probe and methylene blue UV degradation assays, respectively. The results showed that the black TiO2 film is highly absorbent in the UV-visible region, has low electrical resistance and greater surface area compared to the non-treated TiO2 film. These properties of black TiO2 film, as well as its performance as a photocatalytic agent, were investigated, indicating the superior quality of this material in thin film form and the promising potential of the HCHP treatment to produce hydrogenated TiO2 in short process time.

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“…The maximum rates are observed for SF 6 concentrations between 80% and 90%. The low etch rates for lower concentrations of SF 6 can be attributed to the lower effective temperature of electrons in the plasma, while at higher concentrations it can be due to the lowering of electron density [24,25], both of which influence the degree of ionization in the plasma chamber and the etching of polysilicon. At the same time, the presence of oxygen can also be important for the improvement of the etching efficiency by removing the polymer products formed during etching.…”

Section: Resultsmentioning

confidence: 99%

Optimization of dry etching parameters for fabrication of polysilicon waveguides with smooth sidewall using a capacitively coupled plasma reactor

et al. 2014

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In this paper, we demonstrate the optimization of a capacitively coupled plasma etching for the fabrication of a polysilicon waveguide with smooth sidewalls and low optical loss. A detailed experimental study on the influences of RF plasma power and chamber pressure on the roughness of the sidewalls of waveguides was conducted and waveguides were characterized using a scanning electron microscope. It was demonstrated that optimal combination of pressure (30 mTorr) and power (150 W) resulted in the smoothest sidewalls. The optical losses of the optimized waveguide were 4.1±0.6 dB/cm.

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Study of SF₆and SF₆/O₂plasmas in a hollow cathode reactive ion etching reactor using Langmuir probe and optical emission spectroscopy techniques

Cited by 18 publications

References 22 publications

Investigation of absolute atomic fluorine density in a capacitively coupled SF₆/O₂/Ar and SF₆/Ar discharge

Investigation of absolute atomic fluorine density in a capacitively coupled SF₆/O₂/Ar and SF₆/Ar discharge

Black TiO2 Thin Films Production Using Hollow Cathode Hydrogen Plasma Treatment: Synthesis, Material Characteristics and Photocatalytic Activity

Optimization of dry etching parameters for fabrication of polysilicon waveguides with smooth sidewall using a capacitively coupled plasma reactor

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Study of SF6and SF6/O2plasmas in a hollow cathode reactive ion etching reactor using Langmuir probe and optical emission spectroscopy techniques

Cited by 18 publications

References 22 publications

Investigation of absolute atomic fluorine density in a capacitively coupled SF6/O2/Ar and SF6/Ar discharge

Investigation of absolute atomic fluorine density in a capacitively coupled SF6/O2/Ar and SF6/Ar discharge

Black TiO2 Thin Films Production Using Hollow Cathode Hydrogen Plasma Treatment: Synthesis, Material Characteristics and Photocatalytic Activity

Optimization of dry etching parameters for fabrication of polysilicon waveguides with smooth sidewall using a capacitively coupled plasma reactor

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Study of SF₆and SF₆/O₂plasmas in a hollow cathode reactive ion etching reactor using Langmuir probe and optical emission spectroscopy techniques

Investigation of absolute atomic fluorine density in a capacitively coupled SF₆/O₂/Ar and SF₆/Ar discharge

Investigation of absolute atomic fluorine density in a capacitively coupled SF₆/O₂/Ar and SF₆/Ar discharge