Study of structural, optical and thermal properties of nanostructured SnSe2 prepared by mechanical alloying

Borges, Z. V.; Poffo, C.M.; Lima, J.C. de; Souza, Sérgio Michielon de; Trichês, Daniela Menegon; Nogueira, T.P.O.; Manzato, Lizandro; Biasi, R.S. de

doi:10.1016/j.matchemphys.2015.11.026

Cited by 27 publications

(8 citation statements)

References 39 publications

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“…The absorption band of the SnSe 2 nanosheets solution is broad, covering regions from the ultraviolet to near-infrared. It is similar to the absorption band reported for the SnSe 2 powders [20]. For the SnSe 2 QDs solution, only strong absorption from 250 nm to 420 nm is observed.…”

Section: Resultssupporting

confidence: 87%

“…For the SnSe 2 QDs solution, only strong absorption from 250 nm to 420 nm is observed. The bulk SnSe 2 has an indirect bandgap of 1.0 eV [20]. When the particle size is reduced, the emergence of the quantum confinement effects leads to the discretization of energy levels.…”

Section: Resultsmentioning

confidence: 99%

“…The transfer curve of the photodetector with SnSe 2 QDs becomes asymmetric, and the Dirac point converts to a negative gate voltage (about −22 V). The shift indicates that the SnSe 2 QDs are n-type semiconductors, which are the same type as the bulk SnSe 2 [20]. The electron and hole mobilities decrease to ~160 cm 2 V −1 s −1 and ~130 cm 2 V −1 s −1 , respectively.…”

Section: Resultsmentioning

confidence: 99%

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SnSe2 Quantum Dots: Facile Fabrication and Application in Highly Responsive UV-Detectors

Ling

Zhao

et al. 2019

Nanomaterials

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Synthesizing quantum dots (QDs) using simple methods and utilizing them in optoelectronic devices are active areas of research. In this paper, we fabricated SnSe2 QDs via sonication and a laser ablation process. Deionized water was used as a solvent, and there were no organic chemicals introduced in the process. It was a facile and environmentally-friendly method. We demonstrated an ultraviolet (UV)-detector based on monolayer graphene and SnSe2 QDs. The photoresponsivity of the detector was up to 7.5 × 106 mAW−1, and the photoresponse time was ~0.31 s. The n–n heterostructures between monolayer graphene and SnSe2 QDs improved the light absorption and the transportation of photocarriers, which could greatly increase the photoresponsivity of the device.

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Section: Resultssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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SnSe2 Quantum Dots: Facile Fabrication and Application in Highly Responsive UV-Detectors

Ling

Zhao

et al. 2019

Nanomaterials

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“…The thermal diffusivity (l) was measured by a laser flash technique (Netzsch LFA457). The thermal conductivity (k) was calculated by the equation k ¼ dlC p ; where C p is the specific heat capacity obtained from literature [73] and d is the density estimated by a mass/volume method. The electrical transport properties including Seebeck coefficient (S), Hall coefficient (R H ), and resistivity (r ¼ 1/s) of the pellet samples were measured simultaneously from 300 to 750 K, during both heating and cooling.…”

Section: Methodsmentioning

confidence: 99%

Promising thermoelectric performance in van der Waals layered SnSe2

Faghaninia

et al. 2017

Materials Today Physics

104

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a b s t r a c tSnSe as a lead-free IVeVI semiconductor, has attracted intensive attention for its potential thermoelectric applications, since it is less toxic and much cheaper than conventional PbTe and PbSe thermoelectrics. Here we focus on its sister layered compound SnSe 2 in n-type showing a thermoelectric performance to be similarly promising as SnSe in the polycrystalline form. This is enabled by its favorable electronic structure according to first principle calculations, its capability to be effectively doped by bromine on selenium site to optimize the carrier concentration, as well as its intrinsic lattice thermal conductivity as low as 0.4 W/m-K due to the weak van der Waals force between layers. The broad carrier concentration ranging from 0.5 to 6 Â 10 19 cm À3 realized in this work, further leads to a fundamental understanding on the material parameters determining the thermoelectric transport properties, based on a single parabolic band (SPB) model with acoustic scattering. The layered crystal structure leads to a texture in hot-pressed polycrystalline materials and therefore anisotropic transport properties, which can be well understood by the SPB model. This work not only demonstrates SnSe 2 as a promising thermoelectric material but also guides the further improvements particularly by band engineering and texturing approaches.

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“…Помимо основной фазы SnSe на рентгенограмме (рис. 4) можно наблюдать рефлекс при 2θ = 42.76 • , идентификация которого позволила отнести его к тетрагональной кристаллической фазе (P4 2 /mnm) [41,42] с параметрами элементарной ячейки a = b = = (4.736 ± 0.002) ¦ , c = (3.192 ± 0.002) ¦ [42][43][44].…”

Section: результаты и обсуждениеunclassified

Состав, структура, полупроводниковые свойства химически осажденных пленок SnSe

Маскаева¹,

Федорова²,

Марков³

et al. 2019

Физика И Техника Полупроводников

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High adhesion tin monoselenide SnSe layers with a thickness of up to 200 ± 10 nm have been prepared by hydrochemical deposition from a trilonate reaction mixture. It was revealed by the X-ray diffraction method that the synthesized films crystallize in the orthorhombic system (S. G. Pnma). The presence of a significant amount of oxygen in the surface layers of the films is explained by partial oxidation of the samples with the formation of the SnO2 phase. The results of ion etching to a depth of 18 nm showed a sharp decrease in the oxygen content with depth and actual correspondence of the elemental composition to SnSe. According to the results of optical studies, the band gap was found to be 1.69 eV for direct type of transitions, respectively. The synthesized SnSe layers have a hole-type conductivity typical of this material.

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Study of structural, optical and thermal properties of nanostructured SnSe2 prepared by mechanical alloying

Cited by 27 publications

References 39 publications

SnSe2 Quantum Dots: Facile Fabrication and Application in Highly Responsive UV-Detectors

SnSe2 Quantum Dots: Facile Fabrication and Application in Highly Responsive UV-Detectors

Promising thermoelectric performance in van der Waals layered SnSe2

Состав, структура, полупроводниковые свойства химически осажденных пленок SnSe

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