Study of temperature dependent behavior of h-BN nanoflakes based deep UV photodetector

Kaushik, Shuchi; Sorifi, Sahin; Singh, Rajendra

doi:10.1016/j.photonics.2020.100887

Cited by 27 publications

(20 citation statements)

References 38 publications

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“…Moreover, the GaSe akes were mechanically exfoliated, and it has been reported that akes obtained by mechanical exfoliation are prone to edge defects, which serve as traps to the photogenerated electron-hole pairs and reduce the overall speed of the fabricated device. 36,54,55 We further carried out KPFM measurements on the vertical GaSe/Si p-n heterostructure to understand its band alignment. KPFM is one of the electrical modes of AFM; it is used to obtain workfunction values and information regarding the surface potential and charge at the nanoscale.…”

Section: Papermentioning

confidence: 99%

A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors

2022

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Section: Papermentioning

confidence: 99%

A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors

2022

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“…For example, at −10 V, the dark current for photodetector fabricated on bare film was measured to be 4.8×10 −8 A, while it was 5.4×10 −10 A for the passivated film based photodetector. The effect of reduction of the dark current was manifested in the photo-to-dark current ratio (PDCR) of the photodetector, which is given by [43][44][45] :…”

Section: Effect Of Sam On Al05ga05n Epilayersmentioning

confidence: 99%

“…As shown in FIG. 6 (d Besides improving the PDCR, SAM also led to an improvement in the responsivity of the photodetector, which is expressed as 27,44,45 :…”

Section: Effect Of Sam On Al05ga05n Solar-blind Photodetectormentioning

confidence: 99%

Organic passivation of Al_0.5Ga_0.5N epilayers using self-assembled monolayer of Zn(II) porphyrin for improved solar-blind photodetector performance

Kaushik¹,

Naik²,

Ravikanth³

et al. 2021

Semicond. Sci. Technol.

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We report on the passivation of surface states of Al0.5Ga0.5N epilayers by employing self-assembled monolayers (SAM) of organic molecules, which led to a significant improvement in the performance of Al0.5Ga0.5N based solar-blind photodetector. The formation of SAM of meso-(5-hydroxyphenyl)-10,15,20-tri(p-tolyl) porphyrin (ZnTPP(OH)) on the surface of Al0.5Ga0.5N was probed by contact angle measurement (CA), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The successful passivation of surface states was confirmed by Kelvin probe force microscopy (KPFM) as a significant decrease in the surface potential of Al0.5Ga0.5N by ~280 mV was observed. The inference was supported by a four-fold increase in the photoluminescence (PL) intensity of the near-band edge emission (NBE) peak upon passivation. As a result, the dark current of the as-fabricated solar-blind photodetector reduced by 2 orders of magnitude, without compromising with the magnitude of the photo current at 270 nm. The role of SAM was evident in improving the performance of the photodetector as the peak value of photo-to-dark current ratio (PDCR) enhanced by ~36 times. The peak responsivity of the photodetector increased from 1.6 to 2.2 mA/W at 10 V. The significant reduction in the dark current and enhancement in the responsivity led to an improvement in the specific detectivity by ~10 times. Additionally, the response speed of the photodetector was found to improve significantly from 4 to 0.5 s.

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“…Due to the synergistic effect of strong electron scattering, low carrier mobility in normal semiconductors, and increased working temperature, the effective photocurrent (I ph ) is quite faint for imaging or target identification [7][8][9][10]. Otherwise, the spectra response range is the primary parameter for SWIR photodetection, which always requires a narrow bandgap and wide spectra adsorption [11][12][13][14][15][16]. Hence, high mobility, high quality, and wide spectra response are key factors for the next generation of SWIR photodetectors with high temperature tolerance [17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films

et al. 2022

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A narrow bandgap of a few layers of platinic disulfide (PtS2) has shown great advantages in large-area array photodetectors for wide spectra photodetection, which is necessary for infrared imaging and infrared sensing under extreme conditions. The photodetection performance of two dimensional materials is highly dependent on the crystalline quality of the film, especially under high operating temperatures. Herein, we developed large area uniform array photodetectors using a chemical vapor deposition grown on PtS2 films for short-wave infrared photodetection at high operating temperature. Due to the high uniformity and crystalline quality of as-grown large area PtS2 films, as-fabricated PtS2 field effect transistors have shown a broadband photo-response from 532 to 2200 nm with a wide working temperature from room temperature to 373 K. The photo-responsivity (R) and specific detectivity (D*) of room temperature and 373 K are about 3.20 A/W and 1.24 × 107 Jones, and 839 mA/W and 6.1 × 106 Jones, at 1550 nm, respectively. Our studies pave the way to create an effective strategy for fabricating large-area short-wave infrared (SWIR) array photodetectors with high operating temperatures using chemical vapor deposition (CVD) grown PtS2 films.

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Study of temperature dependent behavior of h-BN nanoflakes based deep UV photodetector

Cited by 27 publications

References 38 publications

A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors

A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors

Organic passivation of Al_0.5Ga_0.5N epilayers using self-assembled monolayer of Zn(II) porphyrin for improved solar-blind photodetector performance

Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films

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Study of temperature dependent behavior of h-BN nanoflakes based deep UV photodetector

Cited by 27 publications

References 38 publications

A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors

A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors

Organic passivation of Al0.5Ga0.5N epilayers using self-assembled monolayer of Zn(II) porphyrin for improved solar-blind photodetector performance

Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films

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Organic passivation of Al_0.5Ga_0.5N epilayers using self-assembled monolayer of Zn(II) porphyrin for improved solar-blind photodetector performance