Study of the characteristics of UVA LEDs grown by HVPE: active region thickness-dependent performance

Menkovich, E A; Тарасов, С. А.; Lamkin, I. A.; Соломонов, А. В.; Kurin, S Yu; Antipov, A.V.; Barash, I. S.; Роенков, А. Д.; Usikov, A.; Helava, H.; Makarov, Yu.N.

doi:10.1088/1742-6596/541/1/012054

Cited by 7 publications

(4 citation statements)

References 8 publications

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“…This was in reasonable agreement with such LEDs' quantum efficiency dependence on the thickness of the GaN active layer as published in Ref. [365]. The admittance spectra of the structures are shown in Fig.…”

Section: Deep Traps In Gan/ingan and Algan/algan Leds And Ldssupporting

confidence: 91%

Deep traps in GaN-based structures as affecting the performance of GaN devices

Polyakov

Lee

2015

Materials Science and Engineering: R: Reports

213

177

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Section: Deep Traps In Gan/ingan and Algan/algan Leds And Ldssupporting

confidence: 91%

Deep traps in GaN-based structures as affecting the performance of GaN devices

Polyakov

Lee

2015

Materials Science and Engineering: R: Reports

213

177

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“…However, it seems that a more proper way is to compare the integrated intensity of both bands at low temperature with the integrated intensity of the bandedge luminescence at room temperature. Then the IQE will be much lower, close to 11%, which seems to be more realistic and is in reasonable agreement with the results of structural measurements and output power measurements on LEDs . Deep levels transient spectroscopy measurements on this structure have not revealed a measurable density of midgap states while EBIC measurements yielded a relatively high diffusion length value of 0.12 μm .…”

Section: Resultsmentioning

confidence: 54%

“…However, the external quantum efficiency of these LEDs at the moment falls seriously behind the efficiency of MQW NUV LEDs prepared by MOCVD . Although optimization of the HVPE growth in terms of increasing the active region thickness allows to substantially enhance the performance , further improvement of the internal quantum efficiency (IQE) of NUV LEDs produced by HVPE is very desirable.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

Polyakov

Yun

Ahn

et al. 2015

Physica Rapid Research Ltrs

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Double heterostructures AlGaN/GaN/AlGaN grown by hydride vapor phase epitaxy and designed for use as light emitting diodes for 360 nm wavelength were patterned by shallow nanoholes and injected with Ag/SiO2 or Al nanoparticles. A 1.8 times increase in the photoluminescence and microcathodoluminescence signal from the GaN active region was observed for 100 nm diameter Al nanoparticles, the efficiency decreased compared to the reference planar samples for small Al nanoparticles of 30–40 nm diameter, and a moderate increase of 1.2 times was detected for Ag/SiO2 nanoparticles. The observed phenomena are explained by the GaN emitter coupling with localized surface plasmons produced by metallic nanoparticles. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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“…В качестве источников излучения были выбраны красные (К) и дальнекрасные (ДК) СИД мощностью 3 Вт с длинами волн излучения 660 и 730 нм соответственно на основе гетероструктур AlGaInP. Светодиоды на основе данного соединения широко используются в агрофотонике для улучшения показателей роста растений [6]. Спектральные характеристики светодиодов, которые исследовались согласно методике, описанной в [7], приведены на рис.…”

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Optimal Spectral Radiation Composition of a LED Phytolapm for Stimulating Carrot and Tomato Seed Development

Gubina

Levin

Romanovich

et al. 2022

Izv. vysš. učebn. zaved. Ross., Radioèlektron.

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Introduction. Light-emitting diode (LED) irradiation is widely used in various spheres of human activity, including agriculture. Due to the growing urban population and aggravating environmental situation, the problem of high-quality food provision is increasingly attracting research attention. In this context, it is important to develop energy-efficient optical systems for ensuring optimal irradiation conditions for accelerating the growth of various types of plants and improving the quality of products in autonomous agro-industrial complexes.Aim. Determination of an optimal spectral radiation composition of a phytolamp consisting of LEDs based on AlGalnP (660 and 730 nm) and InGaN (440 nm), as well as phyto-LEDs (400. _ .800 nm), to stimulate the growth and development of tomato and carrot sprouts at the germination stage. Calculation of the LED optical power and photosynthetic photon flux density (PPFD).Materials and methods. Experiments were carried out to study the influence of visible radiation of different quality and quantity on the development parameters of carrot and tomato seeds, including germination energy, the appearance of cotyledon and primary leaves, seed germination, average hypocotyl and root length. Optimal spectral composition and radiation power parameters ensuring effective growth of plants were determined.Results. Additional 660-nm irradiation of tomato sprouts at the germination stage was shown to exhibit a positive effect on germination, average sprout length and root development. The best results of carrot germination and development were achieved when irradiated with short-wavelength light (PPFD 243 µmol∙s–1∙m–2). Irradiation of ~ 170 µmol∙s–1∙m–2 blue and 86 µmol∙s–1∙m–2 red light was found to be effective for enhancing carrot cultivation.Conclusion. The developed irradiation schemes can be used to vary the spectral radiation composition and PPFD at different stages of crop growth and development, thereby increasing yields and reducing energy costs. In the future, this technology can be used in space research, where high energy efficiency is fundamental.

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Study of the characteristics of UVA LEDs grown by HVPE: active region thickness-dependent performance

Cited by 7 publications

References 8 publications

Deep traps in GaN-based structures as affecting the performance of GaN devices

Deep traps in GaN-based structures as affecting the performance of GaN devices

Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

Optimal Spectral Radiation Composition of a LED Phytolapm for Stimulating Carrot and Tomato Seed Development

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