2007
DOI: 10.1016/j.nima.2007.04.025
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Study of the current–voltage characteristics of a SiC radiation detector irradiated by Co-60 gamma-rays

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Cited by 14 publications
(9 citation statements)
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“…Understanding irradiation effects on microstructure evolution, phase transformations, and material behavior is critical to predict system level performance of nuclear material under low-dose rate, long-term irradiation across multiple temporal and spatial scales. 10 In order to fully utilize the potential of SiC for device applications and to predict its performance in nuclear environments, irradiation effects in SiC have been extensively studied under irradiation with gammas, 11 electrons, 12-15 light ions, [16][17][18][19] heavy ions, [19][20][21][22][23][24][25][26] and neutrons. 5,[27][28][29] To characterize and evaluate SiC response under different irradiation conditions, defect production and damage evolution are commonly analyzed and correlated as a function of dose in displacements per atom ͑dpa͒ 2,5,19,20,22,[25][26][27] or ionization rate ͑Gy/h͒.…”
Section: Introductionmentioning
confidence: 99%
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“…Understanding irradiation effects on microstructure evolution, phase transformations, and material behavior is critical to predict system level performance of nuclear material under low-dose rate, long-term irradiation across multiple temporal and spatial scales. 10 In order to fully utilize the potential of SiC for device applications and to predict its performance in nuclear environments, irradiation effects in SiC have been extensively studied under irradiation with gammas, 11 electrons, 12-15 light ions, [16][17][18][19] heavy ions, [19][20][21][22][23][24][25][26] and neutrons. 5,[27][28][29] To characterize and evaluate SiC response under different irradiation conditions, defect production and damage evolution are commonly analyzed and correlated as a function of dose in displacements per atom ͑dpa͒ 2,5,19,20,22,[25][26][27] or ionization rate ͑Gy/h͒.…”
Section: Introductionmentioning
confidence: 99%
“…5,[27][28][29] To characterize and evaluate SiC response under different irradiation conditions, defect production and damage evolution are commonly analyzed and correlated as a function of dose in displacements per atom ͑dpa͒ 2,5,19,20,22,[25][26][27] or ionization rate ͑Gy/h͒. 11,14 These previous investigations under different irradiation conditions address some aspects of the mechanisms and kinetics of irradiation damage, amorphization, and recrystallization, and they reveal irradiation damage processes over different lengths and temporal scales, which are necessary to develop a full and systematic understanding of irradiation effects in SiC. Heavy-ion irradiation is commonly used to introduce significant irradiation damage with minimal introduction of implanted ions or to simulate damage evolution due to alphadecay events.…”
Section: Introductionmentioning
confidence: 99%
“…In most cases, the current is increased with irradiation doses up to 5.4 MGy and then decreased after irradiation doses of 8.1 MGy. In the case of Ti/Au electrode, the current following the three irradiations are overlapped around −50 V, but the In our previous study [12], the I-V characteristics of SiC detectors irradiated by gamma ray were measured, and the result showed a decrease in the leakage current with increasing dose rate. Also, only the bulk effect was considered in previous result because the metal-contact process was operated after gamma-ray irradiation.…”
Section: Methodsmentioning
confidence: 92%
“…The radiation-damage effect on SiC detector has also been a key issue in the research because it is directly related to detector lifetime and also to determinations of optimal detection position. Radiation-damage effects on SiC detector have been studied in considerable breadth and depth [10][11][12][13]. Nava et al [10] observed the change in properties of an SiC detector with various irradiations.…”
Section: Introductionmentioning
confidence: 99%
“…are also possible as well as reactions with less abundant isotopes of carbon and silicon. For neutron spectra derived from down-scattering of fission neutrons, the response of a SiC detector will be dominated by the detection of energetic 12 C and 28 Si ions from (n,n') elastic and inelastic scattering reactions, because the average energy of fission neutrons is ~2 MeV with most of the neutrons having energies less than 6 MeV. Those threshold reactions that are energetically possible will add to the pulse-height continuum, because the incident neutron spectrum is a distribution of energies leading to a distribution of recoil-ion energies.…”
Section: Neutron Response Measurementsmentioning
confidence: 99%