Study of the effect of dislocations introduced by indentation on Cd(111) and Te() faces on the electrical and optical properties of CdTe

Guergouri, K.; Brihi, N.; Triboulet, R.

doi:10.1016/s0022-0248(99)00627-2

Cited by 21 publications

(21 citation statements)

References 16 publications

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“…Experiments show that the formation of Te precipitates is one of the most pressing materials problems in Te-rich CdTe crystals [6][7][8][9][10]. The reduction in transmittance observed in CdTe crystals corresponds to absorption by Te precipitates and they are also detrimental to a number of optical, electro-optical, and liquid phase epitaxy HgCdTe substrate applications [11][12][13][14][15]. In order to control Te precipitation and eliminate Te precipitates, numerous studies of growth techniques [1,[16][17][18][19][20][21], thermodynamic calculations of phase diagrams [22][23][24][25], thermodynamic calculations of kinetic properties of point defects [25][26][27][28], and modeling of solidification [29,30] and Te precipitation [31] have been attempted.…”

Section: Introductionmentioning

confidence: 99%

Phase-field simulations of Te-precipitate morphology and evolution kinetics in Te-rich CdTe crystals

Henager

2009

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Phase-field simulations of Te-precipitate morphology and evolution kinetics in Te-rich CdTe crystals

Henager

2009

Journal of Crystal Growth

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“…The sample indented in dark demonstrates m = 2.2 (the mobility regime), and this function reads as [4]; this dependency is also described by the equation (2).…”

Section: Resultsmentioning

confidence: 99%

Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures

Khlyap

Sydorchuk

2005

MRS Proc.

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A 2 B 6 semiconductors and their solid solutions (ZnSe, ZnTe, CdTe, ZnCdHgTe) are matter of choice for near-and far-infrared optoelectronics. The importance of maximally reduced degree of defectness for these materials is not subjected to discussion. However, preparation of high quality barrier structures based on these compounds by means of MBE, laser technology or liquid phase technique is not always successful due to lattice parameters mismatch. At the same time, good selection of a proper buffer layer may also pose some unavoidable problems. From this point of view the nanoindentation as a tool of defect engineering can be effective for fabrication of surface barrier structures. The first experimental results and numerical simulation of experimental data obtained under investigation of nanoindentation effect on electric characteristics (in particular, current -voltage (I-V) and capacitance -voltage (C-V)) of ZnCdHgTe thin films and ZnCdHgTe/Cd(Zn)Te heterostructures at the room temperature are presented.

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“…By step-wise removal of surface layers until the indenter disappear from the surface ( Fig. 19 Therefore, we related the large tetrahedron to Cd(g) dislocations and the small one to Te(g) dislocations. 1(b).…”

Section: Ir and Sem Analysis On The Indentation Introduced Dislocationmentioning

confidence: 99%

Indentation-introduced dislocation rosettes and their effects on the carrier transport properties of CdZnTe crystal

et al. 2016

CrystEngComm

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Herein, we study the crystallographic configuration of rosette-like dislocation clusters introduced by indentation in CdZnTe (CZT) crystal and the effects of the dislocations on the carrier transport process. The Vickers hardness test was used to generate dislocations artificially on the (111) Te face of the CZT crystal at room temperature. Etch pit density (EPD) revealed by Everson etchant showed that the dislocation density increased from 4.9 × 10 4 cm −2 to a concentration too high to be evaluated after the indentation. A model was proposed to explain the rosette-like dislocation clusters. It was verified that the tetrahedron with small size and high EPD belonged to Te(g) dislocations on the (111) Te face. The hexagon-like distribution of pile-ups formed during the indentation was determined by the zinc-blende structure of CZT, rather than the direction of the indenter. The dislocation pile-up during propagation was observed and analyzed based on the rule proposed by Lomer and Cottrell. The ion beam induced charge (IBIC) measurements showed low carrier collection efficiency (CCE) in the dislocation generation areas, which confirms that the dislocations and related defects can significantly degrade the CCE of a CZT detector. Measurements of low temperature photo-luminescence (PL) showed that the emission peak located at 1.485 eV highly increased in the indentation area and was responsible for the performance degradation of the detectors. CrystEngCommThis journal is

show abstract

Study of the effect of dislocations introduced by indentation on Cd(111) and Te() faces on the electrical and optical properties of CdTe

Cited by 21 publications

References 16 publications

Phase-field simulations of Te-precipitate morphology and evolution kinetics in Te-rich CdTe crystals

Phase-field simulations of Te-precipitate morphology and evolution kinetics in Te-rich CdTe crystals

Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures

Indentation-introduced dislocation rosettes and their effects on the carrier transport properties of CdZnTe crystal

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