Study of the effects of a stepped doping profile in short-channel MOSFETs

López‐Villanueva, J. A.; Gamiz, F.; Roldán, J.B.; Ghailan, Y.; Carceller, J. E.; Cartujo, P.

doi:10.1109/16.622597

Cited by 24 publications

(12 citation statements)

References 21 publications

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“…convenient thickness next to the interface over a high-doping substrate, both the electron mobility and the threshold voltage of the device are improved while avoiding short channel effects [25].…”

Section: Stepped Doping Profilementioning

confidence: 99%

Advancement in Nanoscale CMOS Device Design En Route to Ultra-Low-Power Applications

2011

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In recent years, the demand for power sensitive designs has grown significantly due to the fast growth of battery-operated portable applications. As the technology scaling continues unabated, subthreshold device design has gained a lot of attention due to the lowpower and ultra-low-power consumption in various applications. Design of low-power high-performance submicron and deep submicron CMOS devices and circuits is a big challenge. Short-channel effect is a major challenge for scaling the gate length down and below 0.1 μm. Detailed review and potential solutions for prolonging CMOS as the leading information technology proposed by various researchers in the past two decades are presented in this paper. This paper attempts to categorize the challenges and solutions for low-power and low-voltage application and thus provides a roadmap for device designers working in the submicron and deep submicron region of CMOS devices separately.

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Section: Stepped Doping Profilementioning

confidence: 99%

Advancement in Nanoscale CMOS Device Design En Route to Ultra-Low-Power Applications

2011

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“…(ii) The second key to the further improvement of CMOS technology is the enhancement of carrier mobility in the device channel [10]. In recent years, much research activity has been focused on this task, with the use of specific doping profiles, the growth of low-doped epitaxial layers on high doped substrates [14], and even the use of silicon-related materials instead of silicon. In relation to the latter proposal, a significant step was taken with the introduction of strained silicon to build the MOSFET channel [15].…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulation of nanoelectronic devices

et al. 2009

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The Monte Carlo simulation method is used to analyze the behavior of electron and hole mobility in different nanoelectronic devices including double gate transistors and FinFETs. The impact of technological parameters on carrier mobility is broadly discussed, and its behavior physically explained. Our main goal is to show how mobility in multiple gate devices compares to that in single gate devices and to study different approaches to improve the performance of these devices. Simulations of ultrashort channel devices taking into account quantum effects are also shown.

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“…We have also analyzed how this dependence is affected by trap position in the oxide and by the gate and drain-to-source voltages. In order to achieve this goal, we have used a quasi-two-dimensional short-channel MOSFET simulator including inversion-layer quantization and a one-electron Monte Carlo simulation allowing us to calculate the drain current 18 both in the case of an acceptor occupied trap ͑negatively charged͒ and in the case of an empty trap ͑neutral͒. Furthermore, this procedure provides relatively simple control of all the structure parameters.…”

Section: Introductionmentioning

confidence: 99%

Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal–oxide–semiconductor field-effect transistors

Godoy¹,

Gámiz²,

Palma³

et al. 1997

Journal of Applied Physics

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The amplitude of random telegraph signals (RTS) in an n-channel metal–oxide–semiconductor field-effect transistor has been investigated. Current fluctuations originating when a single-channel electron is trapped or detrapped in the silicon dioxide have been evaluated. A simulation has been performed where the inversion-layer quantization, the dependence of the electron mobility on the transverse and longitudinal electric fields, and the influence of the oxide charges on free-carrier density and on electron mobility have been taken into account. This procedure provides the chance of studying the influence of trap depth in the oxide on the RTS amplitude. In addition, the contributions of the mobility and carrier fluctuations on the amplitude of discrete current switching have been separated, revealing the importance of each factor. Normalized mobility fluctuation has been defined and it was found that its dependence on the gate and drain voltages helped to explain the behavior of the normalized current fluctuations. Finally, the scattering coefficient was evaluated, showing good agreement with previously published data. All these results have allowed us to gain further insight into the role played by electron mobility fluctuations on random telegraph signal amplitude.

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Study of the effects of a stepped doping profile in short-channel MOSFETs

Cited by 24 publications

References 21 publications

Advancement in Nanoscale CMOS Device Design En Route to Ultra-Low-Power Applications

Advancement in Nanoscale CMOS Device Design En Route to Ultra-Low-Power Applications

Monte Carlo simulation of nanoelectronic devices

Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal–oxide–semiconductor field-effect transistors

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