Study of the photoluminescence and photoelectric properties of Pb1−XCdXI2 alloys

Furyer, M.S.; Skubenko, P. A.; Bukivskij, P. M.; Tarakhan, L.M.; Chesnokov, E. D.; Vertegel, I. G.; Ovcharenko, A. I.; Ivanova, L. S.; Gamernyk, R. V.; Gnatenko, Yu. P.

doi:10.1063/1.3512862

Cited by 22 publications

(13 citation statements)

References 20 publications

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“…This makes it possible to determine the nature and energy levels of both the intrinsic defects and the residual impurities as well as the relative concentration of dislocations in semiconductor materials [34,35]. It should also be noted that excitonic PL lines are very sensitive to various defects in semiconductors.…”

Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 99%

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Luminescence

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a b s t r a c tPolycrystalline Cd 1 À x Zn x Te thick films with thicknesses of about 30 μm have been deposited on a Mo coated glass substrate by means of close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained have only cubic zinc blende phase. The influence of Zn concentration on the photoluminescence (PL) spectra of Cd 1 À x Zn x Te films was investigated. This let us determine the nature and energy structure of the intrinsic defects and residual impurities in the films. The presence of the most intense acceptor bound exciton A°X-line for x ¼ 0.10 and the lines of localized excitons (x ¼ 0.32 À 0.44) in PL spectra of Cd 1 À x Zn x Te films indicates their fairly good optical quality as well as the p-type conductivity. There were also other intensive broad PL bands, caused by the recombination of donor-acceptor pairs involving complex acceptor centers, extended defects of dislocation type, and microstress in the films. It was also established a correlation between the broadening of exciton lines and the values of microstress in Cd 1 À x Zn x Te thick films. Taking into account the energy position of exciton lines, the concentration dependence of the band gap for the Cd 1 À x Zn x Te thick films is presented.

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Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 99%

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Luminescence

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“…The low-temperature PL measurements [50][51][52] let us determine the nature and energy levels of both the intrinsic defects and the residual impurities as well as the relative concentration of dislocations in semiconductor materials [53,54]. In this case, the excitonic PL lines are very sensitive to various defects in semiconductors.…”

Section: Photoluminescence Studiesmentioning

confidence: 99%

Composition dependence of structural and optical properties of Cd1−Zn Te thick films obtained by the close-spaced sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Alloys and Compounds

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“…The low-temperature PL measurement is a powerful method of investigation of various defects both in bulk crystals [29][30][31] and in polycrystalline thin films [23,[32][33][34]. We should also note, that the excitonic photoluminescence lines are very sensitive to the various defects in the semiconductor materials.…”

Section: Introductionmentioning

confidence: 99%

Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation

Gnatenko

Opanasyuk

Ivashchenko

et al. 2014

Materials Science in Semiconductor Processing

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a b s t r a c tCdSe polycrystalline films were deposited by a close-spaced vacuum sublimation method at different substrate temperatures (T s ) using glass slides as substrates. At T s r 673 K the films have a structure with strong dispersion of grain size (d) (from 0.1 to 0.3 μm). In this case the layer-by-layer mechanism determines the growth process of the layers. For ) is considerably smaller than for the films deposited at Т s ¼773 K (4.0 Â 10 À 3 ). Increase of the value of T s improves the stoichiometry of CdSe films. Analysis of the low-temperature photoluminescence (PL) spectra let us determine the nature and energy of point and extended defects in the investigated films. It was shown that the films contain Na(Li) and P residual impurities. The results of the structural and PL measurements showed that the CdSe polycrystalline films are of fairly good crystal and optical quality for T s ¼ 873 K and can be suitable for various applications.

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Study of the photoluminescence and photoelectric properties of Pb1−XCdXI2 alloys

Cited by 22 publications

References 20 publications

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Composition dependence of structural and optical properties of Cd1−Zn Te thick films obtained by the close-spaced sublimation

Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation

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