1996
DOI: 10.1016/0039-6028(96)00706-6
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Study of the surface electronic structure of MgO bulk crystals and thin films

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Cited by 116 publications
(74 citation statements)
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“…Thus, the structure seen between 4 and 10 eV binding energy with respect to i F is due to the ionization of MgO valence band (VB) states with predominantly O(2p) character. Good agreement is found between the SDOS derived from MIES and the theoretical results [21]. The lower part of the MgO band gap, between the top of the VB and i F , as determined from Fig.…”
Section: Fig 1 Presents Mies Spectra Acquired Duringsupporting
confidence: 64%
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“…Thus, the structure seen between 4 and 10 eV binding energy with respect to i F is due to the ionization of MgO valence band (VB) states with predominantly O(2p) character. Good agreement is found between the SDOS derived from MIES and the theoretical results [21]. The lower part of the MgO band gap, between the top of the VB and i F , as determined from Fig.…”
Section: Fig 1 Presents Mies Spectra Acquired Duringsupporting
confidence: 64%
“…As shown in previous MIES and UPS studies [20,21], the as-prepared MgO ®lms are very similar to MgO(1 0 0) single crystals with respect to their electronic structure.…”
Section: Experimental and Theoretical Approachsupporting
confidence: 50%
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“…This information can be useful for qualitative analysis of data collected in electron spectroscopy experiments. [59][60][61][62][63] As suggested earlier, 60 to attain the best agreement between calculated density of states and experimental UPS and MIES spectra for MgO, our DOS graphs were generated by smoothing of orbital energy levels with Gaussian functions having a width of 1.0 eV at half-maximum.…”
Section: Methodsmentioning
confidence: 99%
“…Although these graphs do not take into account electron correlation effects, DOS information can be useful for qualitative analysis of data collected in surface characterization experiments. 37 …”
Section: Methodsmentioning
confidence: 99%