Study of γ-ray irradiation influence on TiN/HfO2/Si MOS capacitor by C-V and DLTS

A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO2‐Based Ferroelectric Memory

“…[15,17] The enhanced pinned domain effect may induce a decrease in P r values for all the three types of thin films. Nevertheless, the increasing oxide trapped defects and interface defects induced by the increasing total dose of γ-ray radiation can also take part in the polarization switching for ferroelectric thin films, as reported by Jiménez et al [22,23] Thus there was a competitive relationship between pinned domains and increasing polarization switching charges induced by radiation. At first, pinned domains induced by interface-trapped defects can be a determined role under low doses from fresh to 200 krad, which results in a decrease in P r values in both HfZrO and HfAlO films.…”

Impact of Radiation Effect on Ferroelectric Al-Doped HfO2 Metal-Ferroelectric- Insulator-Semiconductor Structure

“…The increase under positive bias may be due to the radiationinduced trapped holes in the oxide that causes higher electron concentrations at the top TiN electrode. More interface defects can be induced with an increase to the dose of 1 Mrad [13]. The values of Pr and the capacitance in C-V curves of the HfAlO MFIS structure decrease with the increasing dose from fresh to 1 Mrad as represented in Figs.…”

“…D. J. McCrory et al verified the defects induced by γ-ray radiation to be an O2coupled to a hafnium ion of TiN/Ti/HfO2/TiN RRAM devices through electrically detected magnetic resonance (EDMR) [12]. It has verified that interface defects have been formed in the TiN/HfO2/Si MOS capacitor during irradiation, and the accumulation capacitance decreased with the increasing of irradiation dose [13]. Brewer et al indicated that the radiation effect can be also influenced by orientation, domain size, grain boundary density and morphology [14][15].…”

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

“…The devices in a radiation-intensive environment are subjected to the impact of high-energy particles and / or photons which may cause generation of various electrically active defects, leakage currents, early breakdown or loss of stored information. Despite the intensive investigations carried out recently [ 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 ], the radiation response of high- k -based metal-insulator-semiconductor (MIS) devices is far less understood compared to metal-SiO 2 -Si (MOS) structures. The radiation hardness of the alternative dielectrics and especially HfO 2 and Al 2 O 3 has been evaluated as comparable [ 12 , 13 ] or even better than that of SiO 2 [ 14 , 15 ] although the average dissipated energy during irradiation is much higher in HfO 2 than in SiO 2 layer that results in generation of more electron-hole pairs [ 16 , 17 ].…”