Study on high breakdown voltage GaN-based vertical field effect transistor with interfacial charge engineering for power applications

Du, Jiangfeng; Liu, Dong; Liu, Yong; Bai, Zhiyuan; Jiang, Zhiguang; Yu, Qin

doi:10.1016/j.spmi.2017.07.018

Cited by 3 publications

(1 citation statement)

References 31 publications

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“…Although many groups have realized vertical HFETs (VHFETs) with the rapid development of freestanding GaN substrate [9][10][11][12][13][14][15][16][17][18][19], the so far reported V br is still far from the material limit (3 MV cm −1 ) due to the ununiform electric field distribution in the buffer layer. To flat the electric field distribution and achieve higher V br , several techniques have been addressed to GaN VHFETs theoretically, including p-GaN island structure [20], p-GaN buried buffer [21], SiO 2 current blocking layer (CBL) [22], interfacial charge engineering [23], superjunction [24,25], stepdoping superjunction [26] and so on. Among these technologies, the superjunction VHFET (SJ-VHFET) would be a preferred method because it can simultaneously achieve high V br and low R on .…”

Section: Introductionmentioning

confidence: 99%

Theoretical investigation of high-voltage superjunction GaN-based vertical hetero-junction field effect transistor with ununiformly doped buffer to suppress charge imbalance effect

Zhu

Zhou

Feng

et al. 2019

Semicond. Sci. Technol.

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A superjunction GaN-based vertical heterojunction field effect transistor with ununiformly doped buffer (UDSJ-VHFET) is proposed in this paper. In contrast to the conventional superjunction vertical heterojunction field effect transistor (SJ-VHFET), the doping density of n-pillar increases linearly from top to bottom, while the p-pillar is split into three regions: linearly doped top region, uniformly doped middle region and linearly doped bottom region. The ununiform doping profile suppresses the increase of electric field peak due to the imbalanced charge and smooths the electric field distribution, thus leads to an increase of the breakdown voltage (V br ) under charge imbalance condition. Simulation results show that with the doping dose of p-pillar 40% lower (higher) than that of the n-pillar, the V br and on-state resistance (R on ) of the proposed device are 6863 V and 4.25 mΩ cm 2 (5751 V and 4.32 mΩ cm 2 ), comparing with 3205 V and 4.03 mΩ cm 2 (2175 V and 4.10 mΩ cm 2 ) for the conventional SJ-VHFET. Additionally, the proposed device shows a V br of 12280 V and R on of 4.29 mΩ cm 2 under charge balance condition, comparing with 12874 V and 4.07 mΩ cm 2 for the conventional SJ-VHFET.

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