Study on high efficient sapphire wafer processing by coupling SG-mechanical polishing and GLA-CMP

Xu, Yongchao; Lu, Jing; Xu, Xipeng; Chen, Chao‐Chang A.; Lin, Yichen

doi:10.1016/j.ijmachtools.2018.03.002

Cited by 71 publications

(19 citation statements)

References 29 publications

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“…The above experimental results suggest that the material removal mode of single-crystal SiC will transform from brittleness to ductility when decreasing lapping disc hardness. Abrasives have a yield effect on the lapping disc, and [ 23 ] has reported this. That is to say, the abrasives are easily pressed into the lapping disc with lower material hardness under the same pressure.…”

Section: Resultsmentioning

confidence: 96%

Study on Improving the Precise Machinability of Single Crystal SiC by an Ultrasonic-Assisted Hybrid Process

Shi

Zhao

et al. 2021

Materials

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Silicon carbide (SiC) devices have become one of the key research directions in the field of power electronics. However, due to the limitation of the SiC wafer growth process and processing capacity, SiC devices, such as SiC MOSFET (Metal-oxide-semiconductor Field-effect Transistor), are facing the problems of high cost and unsatisfied performance. To improve the precise machinability of single-crystal SiC wafer, this paper proposed a new hybrid process. Firstly, we developed an ultrasonic vibration-assisted device, by which ultrasonic-assisted lapping and ultrasonic-assisted CMP (chemical mechanical polishing) for SiC wafer were fulfilled. Secondly, a novel three-step ultrasonic-assisted precise machining route was proposed. In the first step, ultrasonic lapping using a cast iron disc was conducted, which quickly removed large surface damages with a high MRR (material removal rate) of 10.93 μm/min. In the second step, ultrasonic lapping using a copper disc was conducted, which reduced the residual surface defects with a high MRR of 6.11 μm/min. In the third step, ultrasonic CMP using a polyurethane pad was conducted, which achieved a smooth and less damaged surface with an MRR of 1.44 μm/h. These results suggest that the ultrasonic-assisted hybrid process can improve the precise machinability of SiC, which will hopefully achieve high-efficiency and ultra-precision machining.

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Section: Resultsmentioning

confidence: 96%

Study on Improving the Precise Machinability of Single Crystal SiC by an Ultrasonic-Assisted Hybrid Process

Shi

Zhao

et al. 2021

Materials

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“…Gas–liquid-assisted CMP (GLA-CMP) was developed to reduce surface roughness. Compared with conventional CMP, the surface roughness ( R a ) of a sapphire wafer could be efficiently improved to 0.194 nm within 50 min using GLA-CMP [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Basic Characteristics of Semi-Fixed Abrasive Grains Polishing Technique for Polishing Sapphire (α-Al2O3)

Lei

Feng

et al. 2022

Materials

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Single-crystal sapphire (α-Al2O3) is an important material and widely used in many advanced fields. The semi-fixed abrasive grain processing method based on solid-phase reaction theory is a prominent processing method for achieving ultra-precision damage-free surfaces. In order to develop the proposed method for polishing sapphire, the basic characteristics of the semi-fixed abrasive grains polishing tool for polishing sapphire were determined. Weight analysis was used to study the influence rules of parameters on surface roughness and material removal rates using an orthogonal experiment. Then, the optimized polishing tool was obtained through a mixture of abrasive particle sizes to reduce the difficulty in molding the polishing tool. Finally, polishing experiments using different polishing tools were carried out to investigate polishing performance by considering the surface roughness, material removal rate and the surface morphology during polishing. The results showed that (1) external load affects the surface roughness and material removal rate the most, followed by abrasive particle size, sand bond ratio, revolution speed of the workpiece and he polishing tool; (2) the difficulty in manufacturing the polishing tool could be reduced by mixing larger abrasive particles with small abrasive particles; (3) the polishing tool with 200 nm and 1 μm particle sizes performed best in the first 210 min polishing.

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“…Therefore, uneven dispersion and uncontrollable trajectory problems of ultra ne abrasives can be effectively avoided. Flexible polishing has been reported as an ideal approach to satisfy the processing demands of scratch-free and nano-scale roughness in wafer surfaces [27]. Yuan et al [28] prepared a new soft abrasive polishing plate for monocrystalline silicon polishing.…”

Section: Introductionmentioning

confidence: 99%

A Novel Polishing Process with Rigid-Flexible Composite Structure Plate and Its Performance in Polishing Sapphire Wafer

Chen

Wang

et al. 2021

Preprint

Self Cite

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A novel flexible polishing process has been developed for sapphire wafer by using a polishing plate with rigid-flexible composite structure to satisfy the demands of excellent surface shape accuracy and high surface topography quality simultaneously. This new polishing plate was fabricated by alternately casting and curing the ring structure of soft and hard unsaturated resins. It is found that the overall stiffness of the polishing plate is improved due to the “hard support frame” of rigid-flexible polishing plate, as well as the ability of removal selectivity of the polishing plate is strengthened. The topography quality and shape accuracy of sapphire wafer polished by presented novel polishing process have been compared with those polished by conventional flexible polishing, respectively. Both experiment and simulation results are shown that the surface roughness and topographical variations of sapphire wafer polished by the novel rigid-flexible composite structure polishing plate have been greatly improved. Comparing with the conventional flexible polishing, the surface shape accuracy of the sapphire wafer polished by the presented novel polishing process can be improved by 54.1%.

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Study on high efficient sapphire wafer processing by coupling SG-mechanical polishing and GLA-CMP

Cited by 71 publications

References 29 publications

Study on Improving the Precise Machinability of Single Crystal SiC by an Ultrasonic-Assisted Hybrid Process

Study on Improving the Precise Machinability of Single Crystal SiC by an Ultrasonic-Assisted Hybrid Process

Investigation on the Basic Characteristics of Semi-Fixed Abrasive Grains Polishing Technique for Polishing Sapphire (α-Al2O3)

A Novel Polishing Process with Rigid-Flexible Composite Structure Plate and Its Performance in Polishing Sapphire Wafer

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