Study on Physical Properties of Organic Resist Spacers on Color Filters

Koo,; Kang, Alice J.; Kawai,

doi:10.1109/imnc.2007.4456123

Cited by 2 publications

(1 citation statement)

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“…The first two functional groups can improve the thermal and development properties of the photo spacer, and the third can provide sufficient acid value of the photoresist. The properties of acrylic copolymers, such as their photosensitivity [5], thermal stability [6][7][8][9][10][11][12], pattern resolution [9,13], glass transition temperature [14], nanosilica modified [8,[15][16][17], and physical characteristics [18], have been investigated in negative-type photoresists. The T g values of pure poly(methacrylic acid), polystyrene, poly(isobornyl methacrylate), and poly(phenylmaleimide-costyrene) were obtained from literature [19][20][21][22].…”

Section: Introduction T Hin-film Transistor Liquid Crystal Displays (mentioning

confidence: 99%

Preparation and Properties of Four-component Copolymers Applied in Negative-type Photoresists

Huang

Chen

Hsu

2010

Journal of Thermoplastic Composite Materials

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A series of cyclic monomers were polymerized by free-radical polymerization and used as polymer binders in negative-type photoresists. Thermal properties of the polymer binders and mechanical properties of the pattern were studied. We used four-component polymer binders consisting of methacrylic acid, styrene, isobornyl methacrylate (IBMA), and phenylmaleimide (PMI). The glass transition temperature (T g ) and thermal decomposition temperature (T d ) of polymer binders increased with PMI content because of the rigid characteristics of PMI's molecular structure. Elastic recovery and compression of the patterns were measured using a nanoindenter. The patterns exhibited excellent mechanical properties, presumably due to the rigid characteristics of PMI and IBMA's molecular structures. Patterns of a photo spacer were observed by scanning electron microscopy. Addition of carboxylic acid segments of a cross-linker improved the effectiveness of development in negative-type photoresists, and conical patterns were obtained due to decreased intensity of the inter-penetration network.

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