2009
DOI: 10.1016/j.apsusc.2009.07.063
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Study on sapphire removal for thin-film LEDs fabrication using CMP and dry etching

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Cited by 55 publications
(26 citation statements)
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“…For flip chip, the sapphire will be further polished before the dicing. Our group has shown that sapphire of flip chip can also realize mirror surface with δ lower than 1 nm [60]. But for some commercial LEDs, the surface of sapphire is a little rough, δ of which may be as high as 5 nm, as shown in Fig.…”
Section: Light Scattering On Nano-rough Surfaces Of Blue Ledsmentioning
confidence: 99%
“…For flip chip, the sapphire will be further polished before the dicing. Our group has shown that sapphire of flip chip can also realize mirror surface with δ lower than 1 nm [60]. But for some commercial LEDs, the surface of sapphire is a little rough, δ of which may be as high as 5 nm, as shown in Fig.…”
Section: Light Scattering On Nano-rough Surfaces Of Blue Ledsmentioning
confidence: 99%
“…However, sapphire's extreme hardness and chemical resistance make the abrasion process difficult to perform [16,17]. It particularly makes lapping a challenge because a high removal rate is required to control the thickness and flatness of the substrate.…”
Section: Introductionmentioning
confidence: 99%
“…Softer silica abrasive and alkalescence polishing liquid are typically used in CMP to polish the sapphire wafers. But it is well known that sapphire is chemically inert and insoluble in most substances [6][7][8]. Therefore, it is extremely difficult to polish the sapphire substrates with traditional CMP technology at room temperature to obtain high material remove rate (MRR) and perfect polished surface simultaneously.…”
Section: Introductionmentioning
confidence: 99%