2012
DOI: 10.1016/j.matchemphys.2012.03.078
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Study on structural, morphological and electrical properties of sputtered titanium nitride films under different argon gas flow

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Cited by 64 publications
(22 citation statements)
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“…This type of ceramic can be employed as diffusion barrier in microelectronics, protective coatings for biomedical devices, hard and decorative coatings of mechanical tools or for manufacturing micro-gap discharge devices. The properties that make titanium nitride suitable for applications such as mentioned above are its high hardness, good adhesive wear and resistance to corrosion, high melting temperature, thermal and chemical stability, biocompatibility and so forth [6][7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…This type of ceramic can be employed as diffusion barrier in microelectronics, protective coatings for biomedical devices, hard and decorative coatings of mechanical tools or for manufacturing micro-gap discharge devices. The properties that make titanium nitride suitable for applications such as mentioned above are its high hardness, good adhesive wear and resistance to corrosion, high melting temperature, thermal and chemical stability, biocompatibility and so forth [6][7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…It is known that Ti films deposited by various physical vapor deposition methods generally grow in three crystallographic orientations (i.e. (2 0 0), (1 1 1) and (2 2 0)) [19]. The preferred orientation of a film results from its lowest overall energy, which is a result of competition between the surface energy, the strain energy, and the stopping energy of different lattice planes [20,21].…”
Section: Crystallographic Structurementioning
confidence: 99%
“…In the case of Ti films, the (2 0 4) plane has the lowest surface energy, the (1 1 1) plane has the lowest strain energy, and the (2 1 5) plane has the lowest stopping energy. Only when the deposited ion energy is sufficiently high, the stopping energy becomes dominant, and the preferred (2 1 5) orientation can be observed [19]. Hence, one may propose that only surface energy and strain energy have affected the film growth process.…”
Section: Crystallographic Structurementioning
confidence: 99%
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“…The formation of this layer may not be enough to avoid wear under severe testing conditions. Physical vapor deposition (PVD) techniques such as direct-current (DC) magnetron sputtering, ion plating, and plasma-based ion implantation are employed to deposit TiN thin films [10][11][12].…”
Section: Introductionmentioning
confidence: 99%