Study on the growth rate in VPE of GaN

Seifert, Werner; Fitzl, G.; Butter, E.

doi:10.1016/0022-0248(81)90201-3

Cited by 58 publications

(49 citation statements)

References 13 publications

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“…4 for a fixed HCl flow of 3 sccm. First the GaN growth rate is observed to increase with the introduction of hydrogen in the system, in agreement with previous work of Seifert et al [4], up to a maximum at a H 2 partial pressure of 0.15 atm, and then to decrease monotonically. A decrease of the growth rate with the introduction of hydrogen at partial pressures in the range of 0.3 atm to 0.5 atm was also observed during epitaxial lateral overgrowth on patterned substrates [5].…”

Section: Resultssupporting

confidence: 80%

In-Situ Monitoring of GaN Growth by Hydride Vapor Phase Epitaxy

Martin

Carlin

Wagner

et al. 2002

phys. stat. sol. (a)

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In‐situ reflectivity measurements of the growth surface during deposition in a Hydride Vapor Phase Epitaxy system are presented. The GaN growth rate increases linearly with the HCl flow and increases monotonically with the ammonia flow. Following the replacement of the carrier gas nitrogen by hydrogen, the growth rate initially increases, passes through a maximum at a H2 concentration of 0.15 and then decreases.

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Section: Resultssupporting

confidence: 80%

In-Situ Monitoring of GaN Growth by Hydride Vapor Phase Epitaxy

Martin

Carlin

Wagner

et al. 2002

phys. stat. sol. (a)

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“…(001) GaAs was used as model [2] based on the numerous experiments carried out under various conditions of the chloride method. As explained in [1] the only experimental curves available for computing the model parameters in the GaN HVPE system were the curves reported by Seifert et al [3]. With respect to the GaAs model we have only added a HCl adsorption step in agreement with the quantum chemical study of Seifert et al [4] and we have not overlooked the GaN adsorption.…”

Section: Introductionsupporting

confidence: 51%

“…The objective of this paper is only to present a few theoretical results making it possible to approach the mass transfer and parasitical nucleation effects on the growth rate. In the first part of the paper we recall briefly the physics of the model, then we discuss the theoretical curves obtained by Seifert et al [3] and Paskova et al [5]. These parts are followed by a short conclusion.…”

Section: Introductionmentioning

confidence: 99%

Computed Growth Rates of (001) GaN Substrates in the Hydride Vapour Phase Method

Cadoret

Trassoudaine

Aujol

2001

phys. stat. sol. (a)

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A theoretical model developed to account for the (001) GaN growth by hydride vapour phase epitaxy in H 2 or neutral carrier gases is applied to investigate the variation of the growth rate with the temperature and input partial pressure of GaCl. The curves computed by taking into account the mass transfer and GaN parasitical depositions illustrate the possibilities of the model in analysing and predicting the experimental results, other than the deposition obtained in N 2 /H 2 mixtures without parasitical nucleation at very negative supersaturation values, which seems to indicate a third chlorine desorption mechanism.

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“…The foreign substrate is removed from the sample by etching or other lift off technique and then a large diameter free-standing GaN wafer may be obtained. The big advantage of this method is relatively fast growth rate in the c-direction, exceeding sometimes 100 µm/h [2][3][4]. In turn, the big disadvantage is parasitic deposition of GaN out of the substrate that leads to significant changes in growth conditions during the process.…”

Section: Introductionmentioning

confidence: 99%

Bulk growth of gallium nitride: challenges and difficulties

Boćkowski¹

2007

Cryst. Res. Technol.

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The present status of the GaN bulk growth by High Pressure Solution (HPS) method and combination of HPS and Hydride Vapor Phase Epitaxy (HVPE) methods is reviewed. Up to now the spontaneous high pressure solution growth of GaN results in crystals having habit of hexagonal platelets of surface area of 3 cm 2 or needles with length up to 1 cm. Recently, the platelets and needles have been used as seeds for the HVPE growth. On the other hand, the LPE technique under pressure with pressure-grown GaN (hp-GaN), GaN/sapphire template, patterned GaN/sapphire template and free standing HVPE GaN as seeds has been examined and developed.

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Study on the growth rate in VPE of GaN

Cited by 58 publications

References 13 publications

In-Situ Monitoring of GaN Growth by Hydride Vapor Phase Epitaxy

In-Situ Monitoring of GaN Growth by Hydride Vapor Phase Epitaxy

Computed Growth Rates of (001) GaN Substrates in the Hydride Vapour Phase Method

Bulk growth of gallium nitride: challenges and difficulties

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