Study on the impact of the initialization process on the phase change memory

Ren, Kun; Rao, Feng; Zhang, Song; Lv, Shilong; Zhu, Min; Wu, Liangcai; Liu, Bo; Feng, Songlin

doi:10.1063/1.4808347

Cited by 3 publications

(1 citation statement)

References 16 publications

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“…It is well established the reduction in contact resistance leads to improvement in memory cell performance [20][21][22]. On the other hand, device geometry is also known to influence switching and endurance of the memristor devices [22][23][24][25]. This is particularly true for nanowire devices where the contacts are on the wire surface, so that device operation requires charge injection into and out of the wire in addition to scattering in the vicinity of the contacts to effect charge transport along the wire channel itself.…”

Section: Resultsmentioning

confidence: 99%

Switching at the contacts in Ge₉Sb₁Te₅ phase-change nanowire devices

et al. 2019

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Phase-change random access memory is a promising approach to non-volatile memory. However, the inability to secure consistent, reliable switching on a nanometre scale may limit its practical use for high density applications. Here, we report on the switching behaviour of PCRAM cells comprised of single crystalline Ge9Sb1Te5 (GST) nanowires. We show that device switching is dominated by the contacts and does not result in a resistance change within the bulk of the wire. For the devices studied, the typical contact resistance was ~30 kΩ, whereas the resistance of the GST channel was 1.8 kΩ. The applied voltage was predominately dropped across the passivating oxide on the surface of the GST nanowires, resulting in local resistive switching at the contacts and local power dissipation, which limited the endurance of the devices produced. The optimal device must balance low resistance contacts with a more resistive channel, to facilitate phase change switching within the nanowires. These results highlight the importance of contact formation on the switching properties in phase change devices and help guide the future design of more reliable neuromorphic devices.

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Section: Resultsmentioning

confidence: 99%

Switching at the contacts in Ge₉Sb₁Te₅ phase-change nanowire devices

et al. 2019

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Mechanical and electrical characterization of CVD-grown graphene transferred on chalcogenide Ge2Sb2Te5 layers

D’Arrigo

Christian

Morandi

et al. 2018

Carbon

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Traumatic and pathological conditions leading to the disruption of tissue integrity require clinical intervention through either an implantology or a regenerative medicine approach. The integration of medical devices within the surrounding tissues as well as tissue regeneration by tissue engineering constructs depend on the ability of the implanted biomaterials to control the activity of cells. In any natural tissue, this activity is influenced by extracellular matrix (ECM) macromolecules like proteins and polysaccharides that present in a spatially-ordered manner specific bioligands to the cell receptors. This nanometric control determines the ability of the cell to migrate, proliferate and ultimately regenerate the tissue. Hence, the design and development of novel biomaterials able to resemble the physicochemical and biological properties of the ECM macromolecules have been widely advocated for the surface functionalisation of both medical implants and tissue engineering products.The lecture will present a novel class of synthetic hyperbranched macromolecules and their grafting to conventional biomaterials to provide implants and 3D scaffolds with new biological properties.Examples of these synthetic macromolecules and their applications in a range of clinical applications will be illustrated and critically discussed in the light of the elicited in vitro and in vivo biological responses as well as in the light of their industrial sustainability.

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