Study on the long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors

Aslan, B.; Turan, Raşit; Hc, Liu

doi:10.1016/j.infrared.2005.02.026

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“…The assumption made in their work, i.e., energy lost due to hot carrier and phonon collisions, was taken in to consideration by Mooney and Silverman in improving the model [9] later. In a previous study, the internal photoemission efficiency for SiGe/Si HIP detectors was obtained using different effective masses for the strained SiGe doped absorber/emitter layer and the Si-substrate [10,11]. For non parabolic bands the effective mass is a function of the carrier energy.…”

Section: Present Modelmentioning

confidence: 99%