Study on the optical properties of β-Ga2O3 films grown by MOCVD

Hu, Dapeng; Zhuang, Shiwei; Ma, Zhihua; Dong, Xiaoli; Du, Guotong; Zhang, Baolin; Zhang, Yuantao; Yin, Jingzhou

doi:10.1007/s10854-017-6882-x

Cited by 49 publications

(24 citation statements)

References 24 publications

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“…The more intense Bragg peaks of the film, at 2θ values of 18.91°, 38.33°, 58.98°, 82,01° and 110,21°, correspond to the family (-2n,0,n) planes. Their indexes in C2/m space group are (-201), (-402), (-603), (-804), (-1005) respectively, with a reticular distance d(-2,0,1) = 0.4690 nm, and intensity ratio in agreement with previous works for β-Ga2O3 films grown on c-sapphire [38][39][40][41][42][43] .The only additional detected Bragg peak at 2θ value of 48.71° might be indexed with (5 0 1) β-Ga2O3, with an intensity ratio lower than 0.5%, and may be negligible in term of crystallized volume. So we concluded that studied thin films are textured (-2 0 1) β-Ga2O3 crystalline phase.…”

Section: Sample Preparation and Physical Propertiessupporting

confidence: 89%

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Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor

et al. 2019

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Section: Sample Preparation and Physical Propertiessupporting

confidence: 89%

“…β-Ga2O3 high quality thin films have already been grown by MOCVD using commercial metalorganic precursors such as trimethyl-gallium (TMGa), and pure oxygen [35][36][37][38] . MOCVD is an industrial technique which allows the growth of large-area, uniform semiconductor layers (e.g.…”

Section: Sample Preparation and Physical Propertiesmentioning

confidence: 99%

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor

et al. 2019

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“…The Baliga’s figure of β-Ga 2 O 3 is ∼3400, so it has extremely high application potential in high-breakdown and high-power electronic devices. β-Ga 2 O 3 can also be naturally applied to solar-blind photodetectors because its absorption edge is located in the solar-blind region. , The deposition of the β-Ga 2 O 3 film can be realized by atomic layer deposition, chemical vapor deposition, halide vapor phase epitaxy, pulsed laser deposition (PLD), , magnetron sputtering, , and metal–organic chemical vapor deposition (MOCVD). , β-Ga 2 O 3 can also be alloyed with Al atoms to form β-(Al x Ga 1– x ) 2 O 3 to further modulate the band gap. , …”

Section: Introductionmentioning

confidence: 99%

Heterogrowth of β-(Al_xGa_1–x)₂O₃ Thin Films on Sapphire Substrates

Zhang

Cheng

et al. 2022

Crystal Growth & Design

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β-(Al x Ga1–x )2O3 films were deposited on c-plane sapphire substrates by metal–organic chemical vapor deposition. Triethylgallium (TEGa), trimethylaluminum (TMAl), and O2 were used as Ga, Al, and O sources, respectively. (−201), (−402), and (−603) diffraction peaks of β-(Al x Ga1–x )2O3 films were observed. The X-ray diffraction peaks shifted to larger diffraction angles and were broadened with the increasing TMAl flow rate or the TMAl/(TMAl + TEGa) flow rate ratio, and the optical band gap was effectively improved. The β-(Al x Ga1–x )2O3 films deposited under different temperatures were further investigated. At 600 °C, Al atoms were more easily incorporated into the crystal lattice, and the optical band gap was improved to 5.73 eV. At 800 and 900 °C, the β-(Al x Ga1–x )2O3 films existed as polycrystalline materials.

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“…studied the photoluminescence of β‐Ga 2 O 3 films grown by metal organic vapor phase epitaxy (MOCVD) at various temperatures; surfaces with regular‐shaped crystals and well‐defined boundaries were obtained. [ 25 ] In this work, the effect of growth temperature on the quality of β‐Ga 2 O 3 film was investigated. Threefold facets of surface morphology were obtained on the film grown at 700 °C, and the corresponding formation mechanism was studied.…”

Section: Introductionmentioning

confidence: 99%

Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Feng

Cheng

et al. 2020

Physica Status Solidi (a)

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Growth mechanism and temperature of monoclinic gallium oxide (β‐Ga2O3) films grown by ozone molecular beam epitaxy (MBE) are investigated herein. Phase‐pure (2true¯01) β‐Ga2O3 films can be grown on c‐plane sapphire substrates when the growth temperature exceeds 500 °C, and the grain size increases with the increase in the growth temperature. Sixfold rotational domains are obtained based on the epitaxial relationships (Ga2O3 < 010>//Al2O3<11true¯00> and Ga2O3 < 102>//Al2O3 < 11true2¯0>). For the film grown at 700 °C, the threefold facets are observed for the first time, which are resulted from the easy‐cleaved (100) plane and rotational domains. In addition, the cathodoluminescence spectra of the β‐Ga2O3 films show that the proportion of ultraviolet emission increases with the increase in the growth temperature, which is attributed to the modulation of defect. Finally, the growth rate can be modulated by the ratio of Ga flux and ozone pressure. A reference is provided for heteroepitaxy of β‐Ga2O3 films and better understanding of the ozone MBE growth mechanism of oxides.

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Study on the optical properties of β-Ga2O3 films grown by MOCVD

Cited by 49 publications

References 24 publications

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor

Heterogrowth of β-(Al_xGa_1–x)₂O₃ Thin Films on Sapphire Substrates

Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

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Study on the optical properties of β-Ga2O3 films grown by MOCVD

Cited by 49 publications

References 24 publications

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor

Heterogrowth of β-(AlxGa1–x)2O3 Thin Films on Sapphire Substrates

Investigation of β‐Ga2O3 Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

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Product

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Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor

Heterogrowth of β-(Al_xGa_1–x)₂O₃ Thin Films on Sapphire Substrates

Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy