2019
DOI: 10.1016/j.jnucmat.2019.04.012
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Study on vacancy-type defects in SIMP steel induced by separate and sequential H and He ion implantation

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Cited by 26 publications
(7 citation statements)
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“…Nevertheless, under sequential He-H irradiation, the postimplanted H could be trapped by relatively stable He-V clusters, resulting in the increase of H concentration in the clusters and swelling. In materials under triple beam simultaneously irradiation, the stable He-V clusters would also capture H to form He-H-V clusters and dominate the evolution of cavities (Jin et al, 2019).…”
Section: The Role Of He and H In Synergistic Effectsmentioning
confidence: 99%
“…Nevertheless, under sequential He-H irradiation, the postimplanted H could be trapped by relatively stable He-V clusters, resulting in the increase of H concentration in the clusters and swelling. In materials under triple beam simultaneously irradiation, the stable He-V clusters would also capture H to form He-H-V clusters and dominate the evolution of cavities (Jin et al, 2019).…”
Section: The Role Of He and H In Synergistic Effectsmentioning
confidence: 99%
“…Under triple beam simultaneous irradiation, the stable He-V clusters can also trap hydrogen atoms to form He-H-vacancy clusters and dominate the evolution of cavities [200]. He-H-vacancy clusters formed in He-H synergistic effects are believed to be more stable compared to H-V clusters, from which H could dissociate and escape under certain irradiation conditions.…”
Section: He and H Synergistic Effects On Radiation Hardening And Swel...mentioning
confidence: 99%
“…Another Chinese reduced activation ferritic/martensitic (RAFM) steel SIMP, with enhanced high-temperature oxidation and liquid metal corrosion resistance, was investigated by DBS and TEM, after sequential H and He (room temperature) implantation, in a very comprehensive work of Jin et al [ 81 ]. Similarly to the study by Xin et al [ 79 ], the increase in the S parameter of the H-implanted sample was found to be higher than in the case of the He-implanted sample, despite the lower displacement damage introduced by hydrogen implantation.…”
Section: Application Of Pas Techniques In Accelerator-based Irradiation Experimentsmentioning
confidence: 99%