Studying on source/drain contact resistance reduction for InP-based HEMT

Li, Zhiqiang; An, Ning; Zeng, Jianping; Tong, Xiaodong; Wang, Wenjie; Li, Qian; Liu, Haitao; Liang, Yi; Tang, Hailin; Xiong, Yujie

doi:10.1002/mop.29531

Cited by 3 publications

(2 citation statements)

References 16 publications

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“…Among them, Ni/Ge/Au and Ti/Pt/Au metallic systems are prominent candidates for InP‐based HEMTs . For III–V compound semiconductor devices, the most reported studies about Ohmic contact chiefly concentrate on discussing different metallic structures, compound semiconductor materials and process techniques to achieve the lowest possible contact resistance . Besides, there are still some researches about thermal stability, which almost proceed at different temperatures for about dozens of seconds by rapid thermal annealing (RTA) .…”

Section: Introductionmentioning

confidence: 99%

Long‐Time Thermal Stability Comparison of Alloyed and Non‐Alloyed Ohmic Contacts for InP‐Based HEMTs

Zhong

Wang

Sun

et al. 2017

Physica Status Solidi (a)

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In this paper, the alloyed Ni/Ge/Au/Ge/Ni/Au and non-alloyed Ti/Pt/Au Ohmic contacts are developed for InP-based high electron mobility transistors (HEMTs). The optimal Ohmic contact resistance of 0.053 V mm has been achieved for the alloyed samples by annealing at 320 C for 30 s, and a good Ohmic contact with contact resistance of 0.058 V mm has been formed by Ti/Pt/Au structure without annealing. Considering the actual millimeterwave integrated circuit (MMIC) manufacture process, the long-time thermal stability of Ohmic contact structures are comparatively investigated by observing the contact resistance variation after rapid thermal annealing (RTA) at different temperature for 8 min. The contact resistance of alloyed and nonalloyed Ohmic structures change slightly until 260 and 300 C, respectively. Moreover, the thermal influence of Si 3 N 4 deposition process after contact formation on Ohmic contact is studied by treatment in the plasma-enhanced chemical vapor deposition (PECVD) equipment for 8 min at 280 C. The nonalloyed Ohmic contact shows a favorable stability with little contact resistance and surface roughness deviation. Therefore, Ti/Pt/Au metalized structure should be a more appropriate choice for InP-based MMIC manufacture with high temperature process after contact formation.

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Section: Introductionmentioning

confidence: 99%

Long‐Time Thermal Stability Comparison of Alloyed and Non‐Alloyed Ohmic Contacts for InP‐Based HEMTs

Zhong

Wang

Sun

et al. 2017

Physica Status Solidi (a)

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“…Until now, paths to improve the f T in HEMTs have involved reducing L g down to below 30 nm, improving the mobility of two-dimensional electron gas (µ n,2-DEG ) in a QW channel, and minimizing all the parasitics such as series resistance and gate-fringing capacitance components [20][21][22][23][24][25][26][27][28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

Kim

Lee

et al. 2023

Electronics

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In this study, we investigated the impact of intrinsic output conductance (goi) on the short-circuit current-gain cut-off frequency (fT) in InxGa1-xAs/In0.52Al0.48As quantum-well (QW) high-electron-mobility transistors. At its core, we attempted to extract values of fT using a simplified small-signal model (SSM) of the HEMTs and to derive an analytical formula for fT in terms of extrinsic model parameters that are related with intrinsic model parameters of a general SSM. We projected how fT is influenced by goi in HEMTs, emphasizing that the improvement in electrostatic integrity is also be f critical importance to fully benefit from scaling down Lg.

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Improving the peak current density of resonant tunneling diode based on InP substrate

Li¹,

Tang²,

Liu³

et al. 2017

J. Semicond.

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Resonant tunneling diodes (RTD) have the potential for compact and coherent terahertz (THz) sources operating at room temperature, but their low output power severely restricts their application in THz frequency range. In this paper, two methods are adopted to increase the peak current of RTD for enhancing its output power. First, different metal contact systems (including Pt/Ti/Pt/Au and AuGe/Ni/Au) for RTD contact are introduced, and a higher current of RTD with Pt/Ti/Pt/Au contact demonstrates the superior contact characteristic of Pt/Ti/Pt/Au contact system. Second, the double barrier structure (DBS) of RTD is well designed to further improve the characteristic of RTD, and a high peak current of 154 kA/cm is achieved at room temperature. The improved peak current is very beneficial for increasing the output power of RTD oscillator.

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Studying on source/drain contact resistance reduction for InP-based HEMT

Cited by 3 publications

References 16 publications

Long‐Time Thermal Stability Comparison of Alloyed and Non‐Alloyed Ohmic Contacts for InP‐Based HEMTs

Long‐Time Thermal Stability Comparison of Alloyed and Non‐Alloyed Ohmic Contacts for InP‐Based HEMTs

Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

Improving the peak current density of resonant tunneling diode based on InP substrate

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