Sub-1-V CMOS proportional-to-absolute temperature references

Serra-Graells, F.; Huertas, J.L.

doi:10.1109/jssc.2002.806258

Cited by 96 publications

(37 citation statements)

References 9 publications

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“…The compact CMOS circuit of Fig. 2.21 operates the MOSFET devices in weak inversion in order to bias low-power static consumption [117]. The core of this circuit is composed of M1-M5, while M6-M8 supplies copies of the resulting I bias current to bias the pixel where necessary.…”

Section: Compact Cmos Implementationmentioning

confidence: 99%

Low-Power CMOS Digital Pixel Imagers for High-Speed Uncooled PbSe IR Applications

Margarit¹

2017

Springer Theses

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Certifiquen ResumLa present tesi doctoral descriu la recerca i el desenvolupament d'una nova tecnologia monolítica d'imatgeria infraroja de longitud d'ona mitja (MWIR), no refrigerada i de baix cost, per a usos industrials d'alta velocitat. El treball pren el relleu dels últims avenços assolits pel soci industrial NIT S.L. en el camp dels detectors MWIR de PbSe depositats en fase vapor (VPD), afegint-hi coneixement fonamental en la investigació de noves tècniques de disseny de circuits VLSI analògics i mixtes pel desenvolupament del dispositiu integrat de lectura unit al detector pixelat.Es parteix de la hipòtesi que, mitjançant l'ús de les esmentades tècniques de disseny, les tecnologies CMOS estàndard satisfan tots els requeriments operacionals del detector VPD PbSe respecte a connectivitat, fiabilitat, funcionalitat i escalabilitat per integrar de forma econòmica el dispositiu. La càmera PbSe-CMOS resultant ha de consumir molt baixa potència, operar a freqüències de kHz, exhibir bona uniformitat, i encabir els píxels actius CMOS de lectura en el pitch compacte del pla focal de la imatge, tot atenent a les particulars característiques del detector: altes relacions de corrent d'obscuritat a senyal, elevats valors de capacitat paràsita a l'entrada i dispersions importants en el procés de fabricació.Amb la finalitat de complir amb els requisits previs, es proposen arquitectures de sensors de visió de molt baix acoblament interpíxel basades en l'ús d'una matriu de pla focal (FPA) de píxels actius exclusivament digitals. Cada píxel sensor digital (DPS) està equipat amb mòduls de comunicació d'alta velocitat, autopolarització, cancel·lació de l'offset, conversió analògica-digital (ADC) i correcció del soroll de patró fixe (FPN). El consum en cada cel·la es minimitza fent un ús exhaustiu del MOSFET operant en subllindar.L'objectiu últim és potenciar la integració de les tecnologies de sensat d'imatge infraroja (IR) basades en PbSe per expandir-ne el seu ús, no només a diferents escenaris, sinó també en diferents estadis de maduresa de la integració PbSe-CMOS. En aquest sentit, es proposa investigar un conjunt complet de blocs funcionals distribuïts en dos enfocs paral·lels: viii• Dispositius d'imatgeria MWIR "Smart" basats en frames utilitzant noves topologies de circuit DPS amb correcció de l'FPN en guany i offset. Aquesta línia de recerca exprimeix el pitch del detector per oferir una programabilitat completament digital a nivell de píxel i plena funcionalitat amb compensació de la capacitat paràsita d'entrada i memòria interna de fotograma.• Dispositius de visió MWIR "Compact"-pitch "frame-free" en base a un novedós esquema d'integració analògica en el DPS i diferenciació temporal configurable, combinats amb protocols de comunicació asíncrons dins del pla focal. Aquesta estratègia es concep per permetre una alta compactació del pitch i un increment de la velocitat de lectura, mitjançant la supressió del filtrat digital intern i l'assignació dinàmica de l'ample de banda a cada píxel de l'FPA. Aquest treball ha cond...

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Section: Compact Cmos Implementationmentioning

confidence: 99%

Low-Power CMOS Digital Pixel Imagers for High-Speed Uncooled PbSe IR Applications

Margarit¹

2017

Springer Theses

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“…A BGR voltage output of 1.2 V requires supply voltage over 1.5 V, which limits the applications at very low supply voltage. Many efforts have been made to reduce the reference voltage lower than 1.2 V for sub-1 V operation [6][7][8]. Technical literatures of curvature-compensated BGR circuit [9][10][11] were also proposed to improve issues of non-linear I-V characteristics of a diode or an N -time large diode with serial resistors.…”

Section: Introductionmentioning

confidence: 99%

A low‐voltage band‐gap reference circuit with second‐order analyses

Liang

Chung

Lin

2011

Circuit Theory & Apps

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A new band-gap reference (BGR) circuit employing sub-threshold current is proposed for low-voltage operations. By employing the fraction of VBE and the sub-threshold current source, the proposed BGR circuit with chip area of 0.029mm2 was fabricated in the standard 0.18 m CMOS triple-well technology. It generates reference voltage of 170mV with power consumption of 2.4 W at supply voltage of 1V. The agreement between simulation and measurement shows that the variations of reference voltage are 1.3mV for temperatures from −20 to 100◦C, and 1.1mV per volt for supply voltage from 0.95 to 2.5V, respectively

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“…Even though there are small deviations between the measured and simulated data, the measured values are within the same range and with the same trend of simulated results. It is worth noting that the variations of reference voltages for different process corners are much smaller than those using threshold voltages [5][6] instead of bandgap.…”

Section: Simulation and Measurement Resultsmentioning

confidence: 99%

“…Even though many efforts have been done to reduce the reference voltage lower then 1.2V for sub-1V operation [3][4], they required operational amplifiers (OP) which result in larger power consumption, larger chip area and more difficult OP design. The new trend tries to employ the subthreshold characteristics of MOSFET's to generate low reference voltages for sub-1V operation [5][6]. However, due to mobility and threshold voltage variation with temperature and process corners, the reference voltage variation is much larger than the BGR.…”

Section: Introductionmentioning

confidence: 99%

A Sub-1V Bandgap Reference Circuit Using Subthreshold Current

Lin

Liang

2005 IEEE International Symposium on Circuits and Systems

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-A bandgap reference circuit employing subthreshold current is proposed. Only a small fraction of V BE is utilized to generate the reference voltage of 170mV. Since the subthreshold current of MOSFET's is used as the current source, the circuit only consumes 2.4µW at supply voltage of 1V. It was fabricated using 0.18µm CMOS triple-well technology on chip area of 0.029mm 2 . Both of the measurement and the simulation demonstrate the reference voltage variation is 1.3mV from -20°C to 100°C and is 1.1mV per volt for supply voltage from 0.95V to 2.5V. I. INTRODUCTIONThe reference voltage generator is required in many analog and mixed-signal circuits, such as ADC, DAC, DRAM and flash memories, and so forth. It provides a constant reference voltage independent of process, temperature, and supply voltage variation. The bandgap reference (BGR) is the most stable and popular reference voltage generators [1][2]. However, the reference voltage is usually about 1.2V which requires the supply voltage to be over 1.5V, and thus limits the applications at very low supply voltages. Even though many efforts have been done to reduce the reference voltage lower then 1.2V for sub-1V operation [3][4], they required operational amplifiers (OP) which result in larger power consumption, larger chip area and more difficult OP design. The new trend tries to employ the subthreshold characteristics of MOSFET's to generate low reference voltages for sub-1V operation [5][6]. However, due to mobility and threshold voltage variation with temperature and process corners, the reference voltage variation is much larger than the BGR.This work proposes a simple BGR circuit using subthreshold current without OP's for low-power sub-1V operation. The key idea is that a small fraction of V BE in parasitic bipolar transistors and the difference of two V BE 's are combined to generate the reference voltage of 170mV.

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Sub-1-V CMOS proportional-to-absolute temperature references

Cited by 96 publications

References 9 publications

Low-Power CMOS Digital Pixel Imagers for High-Speed Uncooled PbSe IR Applications

Low-Power CMOS Digital Pixel Imagers for High-Speed Uncooled PbSe IR Applications

A low‐voltage band‐gap reference circuit with second‐order analyses

A Sub-1V Bandgap Reference Circuit Using Subthreshold Current

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