A new band-gap reference (BGR) circuit employing sub-threshold current is proposed for low-voltage operations. By employing the fraction of VBE and the sub-threshold current source, the proposed BGR circuit with chip area of 0.029mm2 was fabricated in the standard 0.18 m CMOS triple-well technology. It generates reference voltage of 170mV with power consumption of 2.4 W at supply voltage of 1V. The agreement between simulation and measurement shows that the variations of reference voltage are 1.3mV for temperatures from −20 to 100◦C, and 1.1mV per volt for supply voltage from 0.95 to 2.5V, respectively
A novel high-speed current-mode sense amplifier is proposed for Bi-NOR flash memory designs. Program and erasure of the Bi-NOR technologies employ bi-directional channel FN tunneling with localized shallow P-well structures to realize the high-reliability, high-speed, and low-power operation. The proposed sensing circuit-with advanced cross-coupled structure by connecting the gates of clamping transistors to the cross-coupled nodes provides excellent immunity against mismatch compared with the other sense amplifiers. Furthermore, the sensing times for various, current differences and bitline capacitances and resistances are all superior to the others. The agreement. between simulation and measurement indicates the sensing speed reaches 2 ns for the threshold voltage difference of lower than I V at 1.8-V supply voltage even with the high threshold voltage of the peripheral CMOS transistors up to 0.8 V
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