Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications

Yoon, Young Jun; Seo, Jae Hwa; Cho, Seongjae; Kwon, Hyuck‐In; Lee, Jung‐Hee; Kang, In Man

doi:10.5573/jsts.2016.16.2.172

Cited by 5 publications

(2 citation statements)

References 16 publications

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“…TFET is operated by band‐to‐band tunneling and has advantages of smaller S values and low‐power operation capability . It has been pointed out that all‐Si TFET has rather low on‐state current and studies have been conducted for overcoming the weakness by material and structure side approaches …”

Section: Introductionmentioning

confidence: 99%

Microwave analysis of SiGe heterojunction double‐gate tunneling field‐effect transistor through its small‐signal equivalent circuit

Jung

Kang

Cho

2019

Int J RF Microw Comput Aided Eng

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In this study, Si 0.5 Ge 0.5 was used as a source junction material in a tunneling field-effect transistor (TFET), which was analyzed using technology computer-aided design (TCAD) simulation and a small-signal non-quasi static (NQS) equivalent circuit. The NQS equivalent circuit with additional tunneling resistance (R tunnel ) enables more accurate analyses. By using a de-embedding process, small-signal parameters in the intrinsic area were obtained. This process was used to analyze the resistance and capacitance in each section, the tendencies of the materials, and the voltage. The error between the NQS equivalent circuit and TCAD device simulation was within 1.9% in the 400-GHz regime. A cut-off frequency (f T ) of up to 0.876 GHz and maximum oscillation frequency (f max ) of 146 GHz were obtained.device simulation, Si 0.5 Ge 0.5 , small-signal equivalent circuit, source junction, tunneling field-effect transistor

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Section: Introductionmentioning

confidence: 99%

Microwave analysis of SiGe heterojunction double‐gate tunneling field‐effect transistor through its small‐signal equivalent circuit

Jung

Kang

Cho

2019

Int J RF Microw Comput Aided Eng

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“…However, the on-state currents (I on ) are generally too small (10 −6 ∼10 −1 μA μm -1 ) when using homogeneous bulk semiconductors as channel materials [6,7]. The I on can be improved to 400 and 142 μA μm −1 in the 20 nm-gate-long Ge-Si [9] and 5 nm-gate-long Ge/GaAs [10] thin heterojunction TFETs, respectively, but remain lower than those of the present high-performance (HP) logic device. Small I on means slow switching speed in the logic device, which is one of the key stumbling blocks for the practical application of TFETs.…”

Section: Introductionmentioning

confidence: 99%

Sub-5 nm monolayer black phosphorene tunneling transistors

Shi

Pan

et al. 2018

Nanotechnology

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The successful fabrication of sub-5 nm 2D MoS field-effect transistors (FETs) announces the approaching post-silicon era. It is possible for tunneling field-effect transistors (TFETs) based on monolayer black phosphorene (ML BP) to work well in the sub-5 nm region because of its moderate direct band gap, anisotropic electronic properties and high carrier mobility. We simulate the device performance limit of the ML BP TFETs at the sub-5 nm scale using ab initio quantum transport calculations. We predict that the on-state currents (I ) of the sub-5 nm ML BP TFETs will exceed those of the ML WTe TFETs, which possess the highest I among the transition-metal dichalcogenide family. In particular, the I of the ML BP TFETs can fulfill the 2028 requirements of the international technology roadmap for semiconductors (ITRS) for the high-performance (HP) devices until the gate length is scaled down to 4 nm, while the delay times and power dissipations always surpass the 2028 requirements of the ITRS HP devices significantly in the whole sub-5 nm region.

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Van der waals BP/InSe heterojunction for tunneling field-effect transistors

Wang

et al. 2021

J Mater Sci

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Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications

Cited by 5 publications

References 16 publications

Microwave analysis of SiGe heterojunction double‐gate tunneling field‐effect transistor through its small‐signal equivalent circuit

Microwave analysis of SiGe heterojunction double‐gate tunneling field‐effect transistor through its small‐signal equivalent circuit

Sub-5 nm monolayer black phosphorene tunneling transistors

Van der waals BP/InSe heterojunction for tunneling field-effect transistors

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