Sub-100 nm Gate III-V MOSFET for Digital Applications

Cheng, K. Y.; Feng, Milton; Cheng, Donald; Liao, Chien Chang

doi:10.1007/978-1-4419-1547-4_10

Cited by 2 publications

(1 citation statement)

References 26 publications

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“…7) Germanium has higher carrier mobility than silicon 8) and higher hole mobility compared to III-V compound semiconductors. 9) These properties are of importance in a variety of electronic applications, such as p-channel field-effect transistors (FETs). Moreover, germanium and silicon have similar physical and chemical characteristics, as shown in the periodic table of elements, making germanium easier to integrate with existing silicon CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

Surface passivation of germanium nanowires using Al₂O₃and HfO₂deposited via atomic layer deposition technique

Simanullang

Usami

Noguchi

et al. 2014

Jpn. J. Appl. Phys.

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We have successfully passivated the surface of germanium nanowires (Ge NWs) using aluminum oxide (Al2O3) and hafnium oxide (HfO2). The atomic layer deposition (ALD) technique was used to deposit Al2O3 and HfO2. We observed an excellent interface between the nanowire surface and Al2O3 and exceptional uniformity of Al2O3 along the length of the nanowire. In the case of nanowires coated with HfO2, we found that a local crystallization of HfO2 may cause defects on the nanowire surface. We have fabricated devices using Ge NWs coated with ultra-thin Al2O3. The current through the nanowire increased after sequential annealing at 400 °C under a forming gas atmosphere. The current increase is ascribed to the diffusion of germanium into Al2O3 that affects the barrier thickness between the metal and the Al2O3/Ge NW. The ultra-thin Al2O3 serves to eliminate charge trapping and protect the germanium surface from ambient molecules and therefore alleviate hysteresis.

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Section: Introductionmentioning

confidence: 99%

Surface passivation of germanium nanowires using Al₂O₃and HfO₂deposited via atomic layer deposition technique

Simanullang

Usami

Noguchi

et al. 2014

Jpn. J. Appl. Phys.

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Electron scattering by structural defects in InSb quantum wells: Analysis with simplified Mayadas-Shatzkes equation

Mıshıma

Edirisooriya

Santos

2011

Journal of Applied Physics

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The scattering of transport electrons in InSb quantum wells (QWs) caused by two types of structural defects, micro-twins (MTs) and threading dislocations (TDs), has been investigated at room temperature. The electron scattering due to a MT is explained by its energy barrier with a height of ∼0.087 eV or its reflection with a coefficient of ∼0.33. The electric charge of a TD is 1.7 × 10−10 C/m along the [001] direction which is perpendicular to the InSb QWs examined in this study, under the assumption that the electron scattering due to a TD is fully attributed to its electric field. The electron scattering efficiency of one TD line in InSb QWs is equivalent to that of MT plates with a total length of 75 nm. In the course of this study, a mathematical simplification was made for Mayadas-Shatzkes equation which is one of the most frequently used equations to analyze carrier scattering due to a planar defect.

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Sub-100 nm Gate III-V MOSFET for Digital Applications

Cited by 2 publications

References 26 publications

Surface passivation of germanium nanowires using Al₂O₃and HfO₂deposited via atomic layer deposition technique

Surface passivation of germanium nanowires using Al₂O₃and HfO₂deposited via atomic layer deposition technique

Electron scattering by structural defects in InSb quantum wells: Analysis with simplified Mayadas-Shatzkes equation

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Sub-100 nm Gate III-V MOSFET for Digital Applications

Cited by 2 publications

References 26 publications

Surface passivation of germanium nanowires using Al2O3and HfO2deposited via atomic layer deposition technique

Surface passivation of germanium nanowires using Al2O3and HfO2deposited via atomic layer deposition technique

Electron scattering by structural defects in InSb quantum wells: Analysis with simplified Mayadas-Shatzkes equation

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Product

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Surface passivation of germanium nanowires using Al₂O₃and HfO₂deposited via atomic layer deposition technique

Surface passivation of germanium nanowires using Al₂O₃and HfO₂deposited via atomic layer deposition technique