Sub-50 nm period patterns with EUV interference lithography

Solak, Harun H.; Dávid, Christian; Gobrecht, J.; Golovkina, V.; Cerrina, F.; Kim, S. O.; Nealey, Paul F.

doi:10.1016/s0167-9317(03)00059-5

Cited by 206 publications

(163 citation statements)

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“…By changing the experimental conditions, different patterns such as dot arrays, ripples or regular gratings can be obtained. Other than that, based on laser interference, two-dimensional (2D) [290] or 3D [291] periodic structures could be generated by so-called laser interference lithography. The periodically distributed high intensity of light physically burned off the polymer mask layer [292,293] or the substrate itself [294], which was used to pattern the growth of ZnO nanowire arrays.…”

Section: Interference Lithographymentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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Section: Interference Lithographymentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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“…Extreme ultraviolet ͑EUV͒ interference lithography combines the advantages of optical lithography with the ability to produce high-precision patterns with control in the subnanometer regime due to the small light wavelength. 49,50 Using EUV, the formation of patterns with even less than 30 nm periodicity is feasible.…”

Section: Introductionmentioning

confidence: 99%

X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal

et al. 2009

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High-resolution x-ray diffraction was employed to study the structural properties of a three-dimensional periodic arrangement of SiGe quantum dots in a Si matrix. Using extreme ultraviolet lithography at a synchrotron source a two-dimensional array of pits ͑period 90ϫ 100 nm 2 ͒ was defined and transferred into a ͑001͒ Si wafer by reactive ion etching. By molecular-beam epitaxy SiGe islands of about 30 nm diameter and 3 nm height were grown into the pits. Subsequent deposition of Si spacer layers of 10 nm thickness and SiGe island layers results in a three-dimensionally periodic arrangement of quantum dots, mediated by the strain fields of the buried dots. Their so far unmatched structural perfection is assessed by coplanar x-ray diffractometry using synchrotron radiation. Reciprocal-space maps around the ͑004͒ and ͑224͒ reciprocal-lattice maps were recorded and analyzed to get quantitative information on the disorder of the dot positions and to obtain the mean Ge content of the dots. In addition, information on the strain fields was deduced from the analysis of the diffraction data. Together with atomic force microscopy data on the island shape and size distribution, a complete structural characterization is achieved.

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“…12 Square arrays of holes were patterned in the resist at the XIL beamline, Swiss Light Source using an XIL mask consisting of Si 3 N 4 / Cr gratings on a silicon nitride membrane fabricated using electron beam lithography. 5 The hole arrays have periods, Fig. 1(c)] showed, despite edge irregularities, a uniform dot diameter of d = ͑44± 1.5͒ nm over the central 40 m square area.…”

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confidence: 99%

“…XIL employs extreme-ultraviolet (EUV) light passing through a grating mask to form multiple beams and the resulting interference pattern is exposed in a polymer resist to produce nanoscale periodic structures. 5,6 It is envisaged that with this method, future development of the x-ray masks will allow us to fabricate dot arrays with periods well below 50 nm. A similar interference technique has been employed to manufacture magnetic nanostructures with laser radiation, 7 but the longer laser wavelength, 193 nm compared with 13 nm for EUV light, gives a lower limit to the period of about 100 nm.…”

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Arrays of nanoscale magnetic dots: Fabrication by x-ray interference lithography and characterization

Heyderman

Solak

Dávid

et al. 2004

Applied Physics Letters

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Sub-50 nm period patterns with EUV interference lithography

Cited by 206 publications

References 7 publications

One-dimensional ZnO nanostructures: Solution growth and functional properties

One-dimensional ZnO nanostructures: Solution growth and functional properties

X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal

Arrays of nanoscale magnetic dots: Fabrication by x-ray interference lithography and characterization

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