Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18 ${\rm pW/Hz}^{1/2}$ Noise Equivalent Power

Zhang, Ze; Rajavel, R. D.; Deelman, Peter W.; Fay, Patrick

doi:10.1109/lmwc.2011.2123878

Cited by 88 publications

(63 citation statements)

References 18 publications

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“…Zero-bias detectors are today normally based on heterojunctions or Schottky diodes, reaching noise-equivalent power (NEP) below 20 pW/Hz 1 =2 beyond 100 GHz. 3,4 Zero-bias detection has been demonstrated in graphene field-effect transistors (FETs) with an NEP of 515 pW/Hz 1 =2 at 600 GHz. 5 Self-switching diodes (SSDs) offer a fundamentally different approach to zero-bias detection in which rectification and detection is achieved by a lateral field-effect.…”

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confidence: 99%

Graphene self-switching diodes as zero-bias microwave detectors

Westlund

Winters

Ivanov

et al. 2015

Applied Physics Letters

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Self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on-wafer measurements from 1 to 67 GHz. The lowest noise-equivalent power (NEP) was observed in SSDs on the hydrogen-intercalated sample, where a flat NEP of 2.2 nW/Hz 1 =2 and responsivity of 3.9 V/W were measured across the band. The measured NEP demonstrates the potential of graphene SSDs as zero-bias microwave detectors. Graphene exhibits electronic properties which are relevant for high-frequency applications 1 such as zero-bias detection in passive imaging arrays. 2 Detectors drawing zero bias current offer reduced 1/f-noise compared to biased detectors. Zero-bias detectors are today normally based on heterojunctions or Schottky diodes, reaching noise-equivalent power (NEP) below 20 pW/Hz 1 =2 beyond 100 GHz. 3,4 Zero-bias detection has been demonstrated in graphene field-effect transistors (FETs) with an NEP of 515 pW/Hz 1 =2 at 600 GHz. 5 Self-switching diodes (SSDs) offer a fundamentally different approach to zero-bias detection in which rectification and detection is achieved by a lateral field-effect. 6 Simulations have shown the feasibility of achieving rectification in graphene using SSD structures. 7,8 SSD detectors have previously been realized in other materials 9-12 with the most promising results for GaAs SSDs in which an NEP of 330 pW/Hz 1 =2 at 1.5 THz was observed. 13 In this work, detection with rectifying graphene SSDs at frequencies up to 67 GHz is demonstrated. The SSDs are realized in both as-grown (n-type) and hydrogen-intercalated (p-type) epitaxial graphene on SiC. Figure 1 shows a scanning electron micrograph of a single SSD channel fabricated in epitaxial graphene. The narrow graphene channel behaves as a lateral nanowire transistor. 6 The surrounding flanges act as lateral gates which are directly connected to the drain such that the drain voltage is simultaneously applied to the gates. This has the effect of modulating the carrier density in the nanowire channel generating a nonlinear current-voltage characteristic. 14 The inset shows an SSD design implemented for RF detection with nine nanowire channels acting in parallel to reduce resistance and NEP. 15 The SSDs were fabricated at the end of a 70 lm coplanar transmission line, in order to provide a partial RF match.Graphene was grown on the Si-face of two 20 Â 20 mm 2 nominally on-axis semi-insulating (SI) 4H-SiC substrates in a horizontal hot wall chemical vapor deposition (CVD) reactor. 16 Graphene growth was carried out at 1300 C to 1400 C in vacuum after an initial in-situ surface preparation of the substrates in a hydrogen/silane background. One of the samples was then intercalated in hydrogen at a temperature (pressure) of 800 C (500 mbar) in order to obtain quasi-free standing graphene. SSDs and supplementary test structures were fabricated on the graphene layers with and without H-intercalation. As-grown samples then consisted of a monolayer plus carbon buf...

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confidence: 99%

Graphene self-switching diodes as zero-bias microwave detectors

Westlund

Winters

Ivanov

et al. 2015

Applied Physics Letters

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“…In this work, we exploit this property of the WSe2/SnSe2 heterojunction to demonstrate a backward diode with a large curvature coefficient of ~37 V -1 , coupled with an extremely high reverse rectification ratio of ~2.1 × 10 4 , outperforming previously reported numbers 19,20,[33][34][35][36][37][38][39][40][41][42][43] . We also demonstrate an efficient modulation of the rectification ratio by tuning the applied gate voltage, contact metals, and thickness of the WSe2 layer.…”

Section: Introductionmentioning

confidence: 98%

Gate-Tunable WSe₂/SnSe₂ Backward Diode with Ultrahigh-Reverse Rectification Ratio

Krishna

Dandu

Das

et al. 2018

ACS Appl. Mater. Interfaces

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“…The active tuning of terahertz transmission demonstrated in this work suggests that graphene-based structures are attractive for terahertz modulators and electrically reconfigurable filters and attenuators. Free from lattice-matching often required in epitaxial semiconductor heterostructures, these graphene modulators may be easily integrated with existing solid-state continuous wave (CW) terahertz sources such as quantum cascade lasers 31 and resonant tunnelling diode oscillators 32 , and with terahertz detectors such as Schottky diodes 33 and backward diodes 34 , or future graphenebased terahertz emitters and detectors [3][4][5] . The possibilities of facile integration make graphene modulators promising as singlechip solutions for compact and cost-effective transceivers in the terahertz band.…”

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confidence: 99%

Broadband graphene terahertz modulators enabled by intraband transitions

et al. 2012

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Terahertz technology promises myriad applications including imaging, spectroscopy and communications. However, one major bottleneck at present for advancing this field is the lack of efficient devices to manipulate the terahertz electromagnetic waves. Here we demonstrate that exceptionally efficient broadband modulation of terahertz waves at room temperature can be realized using graphene with extremely low intrinsic signal attenuation. We experimentally achieved more than 2.5 times superior modulation than prior broadband intensity modulators, which is also the first demonstrated graphene-based device enabled solely by intraband transitions. The unique advantages of graphene in comparison to conventional semiconductors are the ease of integration and the extraordinary transport properties of holes, which are as good as those of electrons owing to the symmetric conical band structure of graphene. Given recent progress in graphene-based terahertz emitters and detectors, graphene may offer some interesting solutions for terahertz technologies.

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Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18 ${\rm pW/Hz}^{1/2}$ Noise Equivalent Power

Cited by 88 publications

References 18 publications

Graphene self-switching diodes as zero-bias microwave detectors

Graphene self-switching diodes as zero-bias microwave detectors

Gate-Tunable WSe₂/SnSe₂ Backward Diode with Ultrahigh-Reverse Rectification Ratio

Broadband graphene terahertz modulators enabled by intraband transitions

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Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18 ${\rm pW/Hz}^{1/2}$ Noise Equivalent Power

Cited by 88 publications

References 18 publications

Graphene self-switching diodes as zero-bias microwave detectors

Graphene self-switching diodes as zero-bias microwave detectors

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

Broadband graphene terahertz modulators enabled by intraband transitions

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Gate-Tunable WSe₂/SnSe₂ Backward Diode with Ultrahigh-Reverse Rectification Ratio