1998
DOI: 10.1117/1.601788
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Subpixel sensitivity map for a charge-coupled device sensor

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Cited by 57 publications
(38 citation statements)
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“…As it was shown in Ref. 42 there is a dependence of the effective pixel optical center depending on the wavelength of the light. An effect of the order of 0.01 μm/nm (optical position varies by ~30% of the pixel pitch between 905 nm and 400 nm) was experimentally observed with a CCD with pixel pitch of 24 μm.…”
Section: Ltp Drifts and Instabilitiesmentioning
confidence: 87%
“…As it was shown in Ref. 42 there is a dependence of the effective pixel optical center depending on the wavelength of the light. An effect of the order of 0.01 μm/nm (optical position varies by ~30% of the pixel pitch between 905 nm and 400 nm) was experimentally observed with a CCD with pixel pitch of 24 μm.…”
Section: Ltp Drifts and Instabilitiesmentioning
confidence: 87%
“…As far as the CCD detector is concerned, the majority of its characteristics (such as variations between pixels in quantum efficiency, dark current, charge transfer efficiency, amplifier gain, and bias) can be calibrated and corrected rather easily [74][75][76]. However, characteristics such as errors in the CCD's pixel position due to chip fabrication tolerances or intra-pixel quantum efficiency variations (i.e., changes in the light sensitivity across each pixel due to its internal make-up [77,78]) resist easy calibration.…”
Section: Metrological Characterisation Of Autocollimatorsmentioning
confidence: 99%
“…We conclude this section with a discussion on the indirect techniques. [9,10,11]. The microscope allows the de-magnification and focusing of the pinhole illumination onto the DUT.…”
Section: B Overview Of the Measurement Techniquesmentioning
confidence: 99%