2012
DOI: 10.1016/j.microrel.2012.06.130
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Subsurface analysis of semiconductor structures with helium ion microscopy

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Cited by 21 publications
(15 citation statements)
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“…7, results of a HIM study on the subsurface formation of Pd interconnects are presented. 74 While a large degree of surface detail is present in the SE image presented in Fig. 7(a), no direct indication of the buried Pd 2 Si interconnect is visible.…”
Section: B Subsurface Imagingmentioning
confidence: 94%
“…7, results of a HIM study on the subsurface formation of Pd interconnects are presented. 74 While a large degree of surface detail is present in the SE image presented in Fig. 7(a), no direct indication of the buried Pd 2 Si interconnect is visible.…”
Section: B Subsurface Imagingmentioning
confidence: 94%
“…We propose to read out samples with recently developed Helium Ion beam Microscopy (HIM) [103], which has spatial resolution similar to EM. However, it causes less sample damage than EM [104] and is capable of sub-surface imaging to depths of O(100) nm. Further progress with respect to the two-dimensional readout with EM or AFM can be made by using a Focused Ion Beam (FIB) of either neon or gallium ions for sample preparation (for example, see [105]).…”
Section: Read-out Methodsmentioning
confidence: 99%
“…The system is equipped with a standard Everhardt Thornley Detector to record secondary electron (SE) based images. In addition, detectors to count back scattered helium (BSHe) [11,28] measure their energy [29,30] and collect photons to enable ionoluminescence [31,32] studies of materials are present. The presented images were recorded using a sample tilt of 35°to exploit channeling into the underlying bulk crystal.…”
Section: Methodsmentioning
confidence: 99%