Sulfur‐Assisted Approach for the Low‐Temperature Synthesis of β‐SiC Nanowires

Abstract

Silicon carbide (SiC) nanowires coexisting with amorphous graphite particles were initially produced by using silicon powder, tetrachlorethylene, metallic Na, and sulfur powder as reactants in an autoclave at 130°C. Pure β-SiC could be finally obtained after heating the sample in concentrated H 2 SO 4 by refluxing at 180°C, which was proved by the Xray powder diffraction patterns. Transmission electron microscopy (TEM) images and scanning electron microscope (SEM) images show that the product is mainly composed of SiC nanowires (over 75 %) with an average diameter of about of 30 nm and lengths up to tens of micrometers. High-resolu-

SiC nanowires: material and devices

“…In conclusion, the emission characteristics of the blue broad band and the other emission wavelengths from β-SiC nanostructures, depend strongly on their shapes and sizes as well as on their preparation method inducing various defects and different NW surface states [37].…”

“…In general a reducing environment enhances the catalyst free growth and can result in SiC-NW-formation-temperatures lower than 400ºC as it was shown in [37] and [38]. However, a subsequent cleaning, either in hot (180ºC) chemical environments or by heating (600ºC) on air, has been necessary to separate the SiC NWs from other by-products of the reaction.…”

“…In both studies, SiCl 4 and CCl 4 have been used as silicon and carbon precursors and Na as a co-reductant element. In [37], the addition of sulphur led to further decrease of the required temperature down to 130ºC due to the catalytic role of the Na 2 S formed during the reactions.…”

Molten salt assisted synthesis of 3C–SiC nanowire and its photoluminescence properties

“…For the growth of SiC nanowires (NWs), several routes/ techniques have been reported, including template synthesis [12], combustion [13], solution method [14], arc-discharge [15], sol-gel [16], chemical vapor deposition (CVD) [17], laser ablation [18] and carbothermal reduction (CR) [19]. However, these techniques are highly expensive and unsuitable for large scale preparation.…”

Synthesis and characterization of 3C and 2H-SiC nanocrystals starting from SiO2, C2H5OH and metallic Mg

“…Various methods have been developed for the synthesis of SiC nanocrystals, such as the carbothermal reduction reaction [4,5], chemical vapor reaction [6], sol-gel [7,8], self-propagating high temperature synthesis [9], autoclave route [10][11][12][13][14][15] and so on. Among these methods, prepare SiC in an autoclave is one of the effective routes at low temperature, such as the reactant systems: SiCl 4 -Na-C [10] or SiCl 4 -Na-C 6 Cl 6 [11] at 600 • C, SiCl 4 -Na-CCl 4 at 400 • C [12], SiCl 4 -Na-K-CBr 3 H at 130 • C [13], or sulfur-assisted reduction route (Si-S-Na-C 2 Cl 4 ) at 130 • C [14].…”