Sulfur Incorporation at Interface Between Atomic-Layer-Deposited Al2O3 Thin Film and AlGaN/GaN Heterostructure

Jo, Yoo Jin; Jin, Hyungyu; Ha, Min−Woo; Park, Tae Joo

doi:10.1007/s13391-018-00110-x

Cited by 5 publications

(2 citation statements)

References 53 publications

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“…Al 2 O 3 is a functional material with good electrical insulation, large forbidden band width (E g ≈ 8.8 eV), high transparency, high refractive index, large mechanical strength, and good thermal conductivity [1][2][3][4][5][6][7][8]. It has stable chemical properties at high temperature.…”

Section: Introductionmentioning

confidence: 99%

Facile growth of aluminum oxide thin film by chemical liquid deposition and its application in devices

Ruan

Sun

et al. 2020

Nanotechnology Reviews

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Uniform and continuous Al2O3 thin films were prepared by the chemical liquid deposition (CLD) method. The breakdown field strength of the amorphous CLD-Al2O3 film is 1.74 MV/cm, making it could be used as a candidate dielectric film for electronic devices. It was further proposed to use the CLD-Al2O3 film as an electron blocking layer in a triboelectric nanogenerator (TENG) for output performances enhancement. Output voltages and currents of about 200 V and 9 µA were obtained, respectively, which were 2.6 times and 3 times, respectively, higher than TENG device without an Al2O3. A colloidal condensation-based procedure controlled by adjusting the pH value of the solution was proposed to be the mechanism of CLD, which was confirmed by the Tyndall effect observed in the growth liquid. The results indicated that the CLD could serve as a low-cost, room temperature, nontoxic and facile new method for the growth of functional thin films for semiconductor device applications.

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Section: Introductionmentioning

confidence: 99%

Facile growth of aluminum oxide thin film by chemical liquid deposition and its application in devices

Ruan

Sun

et al. 2020

Nanotechnology Reviews

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“…This allows for the formation of chemically stable -S-terminated surfaces with minimal defects. [24][25][26][27][28][29][30][31][32] However, other III-V surfaces are not easily passivated where (NH 4 ) 2 S treatment leads to the formation of surface oxides. [33] In addition, other interfacial passivation layers, such as germanium, [34] silicon, and Si/Si 3 N 4 , [35] tend to exhibit superior interfacial properties on GaAs and InGaAs.…”

Section: Fermi-level Pinningmentioning

confidence: 99%

Interfaces in Atomic Layer Deposited Films: Opportunities and Challenges

Zaidi,

Park,

Han

et al. 2023

Small Science

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Atomic layer deposition (ALD) is an effective method for precise layer‐wise growth of thin‐film materials and has allowed for substantial progress in a variety of fields. Advances in the technique have instigated high‐level interpretations of the relationship between nanostructure architecture and performance. An inherent part in the ALD of films is the underlying interfaces between each material, which plays a significant role in advanced electronics. Considering the impact of sandwiched substructures, it is appropriate to highlight opportunities and challenges faced by applications that rely on these interfaces. This review encompasses the current prospects and obstacles to further performance improvements in ALD‐generated interfaces. 2D electron gas, high‐k materials, freestanding layered structures, lattice matching, and seed layers, as well as prospects for future research, are explored.

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Gate Architecture Effects on the Gate Leakage Characteristics of GaN Wrap-gate Nanowire Transistors

Mallem

Thingujam

et al. 2020

Electron. Mater. Lett.

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Sulfur Incorporation at Interface Between Atomic-Layer-Deposited Al2O3 Thin Film and AlGaN/GaN Heterostructure

Cited by 5 publications

References 53 publications

Facile growth of aluminum oxide thin film by chemical liquid deposition and its application in devices

Facile growth of aluminum oxide thin film by chemical liquid deposition and its application in devices

Interfaces in Atomic Layer Deposited Films: Opportunities and Challenges

Gate Architecture Effects on the Gate Leakage Characteristics of GaN Wrap-gate Nanowire Transistors

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