No abstract

Stable electroluminescence from micro-pixelated light-emitting diode (μLeD) occurs when electrons and holes are continuously injected from external electrodes. Different from the general recognition, in this work, μLED works in an operation mode, namely, non-electrical contact and non-carrier injection mode, and can be 'wirelessly' lit up without external charge injection, which is different from the general recognition. inherent holes and electrons in μLEDs can provide sufficient carriers for radiative recombination under alternating-current electric field. A possible model related to the diffusion of majority carrier and the drift of minority carrier in μLED was proposed, which is further confirmed by the employment of a 'carrier pump'. Finally, the intrinsic characteristics of the device-in-capacitor, namely, self-protection against electrical breakdown, were discussed. This work demonstrates a new device configuration and an alternative operating mode for μLeD and provides a research manner to obtain advanced μLeD-based technology.

Uniform and continuous Al2O3 thin films were prepared by the chemical liquid deposition (CLD) method. The breakdown field strength of the amorphous CLD-Al2O3 film is 1.74 MV/cm, making it could be used as a candidate dielectric film for electronic devices. It was further proposed to use the CLD-Al2O3 film as an electron blocking layer in a triboelectric nanogenerator (TENG) for output performances enhancement. Output voltages and currents of about 200 V and 9 µA were obtained, respectively, which were 2.6 times and 3 times, respectively, higher than TENG device without an Al2O3. A colloidal condensation-based procedure controlled by adjusting the pH value of the solution was proposed to be the mechanism of CLD, which was confirmed by the Tyndall effect observed in the growth liquid. The results indicated that the CLD could serve as a low-cost, room temperature, nontoxic and facile new method for the growth of functional thin films for semiconductor device applications.

As a promising advanced computation technology, the integration of digital computation with neuromorphic computation into a single physical platform holds the advantage of a precise, deterministic, fast data process as well as the advantage of a flexible, paralleled, fault-tolerant data process. Even though two-terminal memristive devices have been respectively proved as leading electronic elements for digital computation and neuromorphic computation, it is difficult to steadily maintain both sudden-state-change and gradual-state-change in a single device due to the entirely different operating mechanisms. In this work, we developed a digital–analog compatible memristive device, namely, binary electronic synapse, through realizing controllable cation drift in a memristive layer. The devices feature nonvolatile binary memory as well as artificial neuromorphic plasticity with high operation endurance. With strong nonlinearity in switching dynamics, binary switching, neuromorphic plasticity, two-dimension information store, and trainable memory can be implemented by a single device.