Super High Frequency Simple Process Flow Cross-Sectional Lamé Mode Resonators in 20% Scandium-Doped Aluminum Nitride

Schaffer, Zachary; Piazza, Gianluca; Mishin, Sergey; Oshmyansky, Yury

doi:10.1109/mems46641.2020.9056279

Cited by 9 publications

(1 citation statement)

References 8 publications

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“…In this work, the LWRs with series resonant frequencies of 402.1 MHz and 2.097 GHz were designed and fabricated, and their f s ·Q s values could reach 1.53 × 10 12 and 2.86 × 10 12 , respectively. A high Figure of Merit ( FOM = k 2 eff × Q s ) of 43.82 and 11.21 was obtained, which was comparable with that of reported AlN LWRs [ 10 , 25 , 26 , 27 ], as shown in Table 4 . The experimental results demonstrate that the proposed fabrication process can be capable of producing LWRs with a high f s ·Q s and moderate FOM .…”

Section: Measurement and Discussionsupporting

confidence: 87%

A MEMS Fabrication Process with Thermal-Oxide Releasing Barriers and Polysilicon Sacrificial Layers for AlN Lamb-Wave Resonators to Achieve fs·Qm > 3.42 × 1012

et al. 2021

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This paper presents a micro-electro-mechanical systems (MEMS) processing technology for Aluminum Nitride (AlN) Lamb-wave resonators (LWRs). Two LWRs with different frequencies of 402.1 MHz and 2.097 GHz by varying the top interdigitated (IDT) periods were designed and fabricated. To avoid the shortcomings of the uncontrollable etching of inactive areas during the releasing process and to improve the fabrication yield, a thermal oxide layer was employed below the platted polysilicon sacrificial layer, which could define the miniaturized release cavities well. In addition, the bottom Mo electrode that was manufactured had a gentle inclination angle, which could contribute to the growth of the high-quality AlN piezoelectric layer above the Mo layer and effectively prevent the device from breaking. The measured results show that the IDT-floating resonators with 12 μm and 2 μm electrode periods exhibit a motional quality factor (Qm) as high as 4382 and 1633. The series resonant frequency (fs)·Qm values can reach as high as 1.76 × 1012 and 3.42 × 1012, respectively. Furthermore, Al is more suitable as the top IDT material of the AlN LWRs than Au, and can contribute to achieving an excellent electrical performances due to the smaller density, smaller thermo-elastic damping (TED), and larger acoustic impedance difference between Al and AlN.

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Section: Measurement and Discussionsupporting

confidence: 87%

A MEMS Fabrication Process with Thermal-Oxide Releasing Barriers and Polysilicon Sacrificial Layers for AlN Lamb-Wave Resonators to Achieve fs·Qm > 3.42 × 1012

et al. 2021

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Twist piezoelectricity: giant electromechanical coupling in magic-angle twisted bilayer LiNbO3

Yao,

Zheng,

Zhang

et al. 2024

Nat Commun

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Twisted a pair of stacked two-dimensional materials exhibit many exotic electronic and photonic properties, leading to the emergence of flat-band superconductivity, moiré engineering and topological polaritons. These remarkable discoveries make twistronics the focus point of tremendous interest, but mostly limited to the concept of electrons, phonons or photons. Here, we present twist piezoelectricity as a fascinating paradigm to modulate polarization and electromechanical coupling by twisting precisely the stacked lithium niobate slabs due to the interlayer coupling effect. Particularly, the inversed and twisted bilayer lithium niobate is constructed to overcome the intrinsic mutual limitation of single crystals and giant effective electromechanical coupling coefficient $${k}_{t}^{2}$$ k t 2 is unveiled at magic angle of $$111^\circ$$ 11 1 ∘ , reaching 85.5%. Theoretical analysis based on mutual energy integrals shows well agreements with numerical and experimental results. Our work opens new venues to flexibly control multi-physics with magic angle, stimulating progress in wideband acoustic-electric, and acoustic-optic components, which has great potential in wireless communication, timing, sensing, and hybrid integrated photonics.

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X-Band Multi-Frequency 30% Compound SCALN Microacustic Resonators and Filters for 5G-Advanced and 6G Applications

Giribaldi

Pirro

Assylbekova

et al. 2022

2022 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS)

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Super High Frequency Simple Process Flow Cross-Sectional Lamé Mode Resonators in 20% Scandium-Doped Aluminum Nitride

Cited by 9 publications

References 8 publications

A MEMS Fabrication Process with Thermal-Oxide Releasing Barriers and Polysilicon Sacrificial Layers for AlN Lamb-Wave Resonators to Achieve fs·Qm > 3.42 × 1012

A MEMS Fabrication Process with Thermal-Oxide Releasing Barriers and Polysilicon Sacrificial Layers for AlN Lamb-Wave Resonators to Achieve fs·Qm > 3.42 × 1012

Twist piezoelectricity: giant electromechanical coupling in magic-angle twisted bilayer LiNbO3

X-Band Multi-Frequency 30% Compound SCALN Microacustic Resonators and Filters for 5G-Advanced and 6G Applications

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