Abstract:We combine first-principles calculations, a three-band tight-binding model, and Bardeen-Cooper-Schrieffer theory to explore the physical mechanism for a dome-shaped dependence of superconducting transition temperature of monolayer MoS 2 on electron doping concentration, which has been observed experimentally (2012 Science 338 1193). We find that in the process of doping more electrons contribute to superconducting pairing, but above some doping value the effective attractive interaction decreases so greatly th… Show more
“…The as-received films were not superconducting, but all the electrochemically reduced films we tested, ranging from 16 mC • cm −2 to 110 mC • cm −2 , exhibited superconducting transitions. Our results, shown in figure 1(a), were consistent with a domeshaped dependence of transition temperature on reduction charge density as reported by others in ITO [16] and in line with the behavior of several other superconducting doped semiconductors [22][23][24][25]. The maximum transition temperature observed was 4 K in a sample reduced to about 60 mC • cm −2 .…”
Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material like niobium can absorb over half of any incident optical radiation. We propose instead using superconductors which are transparent to the wavelengths used elsewhere in the system. In this paper we investigated reduced indium tin oxide (ITO) as a potential transparent superconductor for electronics. We fabricated and characterized superconducting wires of reduced indium tin oxide. We also showed that a 10 nm thick film of the material would only absorb about 1 - 20% of light between 500 - 1700 nm.
“…The as-received films were not superconducting, but all the electrochemically reduced films we tested, ranging from 16 mC • cm −2 to 110 mC • cm −2 , exhibited superconducting transitions. Our results, shown in figure 1(a), were consistent with a domeshaped dependence of transition temperature on reduction charge density as reported by others in ITO [16] and in line with the behavior of several other superconducting doped semiconductors [22][23][24][25]. The maximum transition temperature observed was 4 K in a sample reduced to about 60 mC • cm −2 .…”
Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material like niobium can absorb over half of any incident optical radiation. We propose instead using superconductors which are transparent to the wavelengths used elsewhere in the system. In this paper we investigated reduced indium tin oxide (ITO) as a potential transparent superconductor for electronics. We fabricated and characterized superconducting wires of reduced indium tin oxide. We also showed that a 10 nm thick film of the material would only absorb about 1 - 20% of light between 500 - 1700 nm.
“…First, based on orbitals {d xy , d x 2 – y 2 , d z 2 } of Mo atoms, 62–64 we build the three-band TBM via considering the nearest-neighbor hopping (NNP) in plane and next-NNP out of plane. The matrix elements of the Hamiltonian are given by , in which is the hopping integral between the different atomic orbitals.…”
Based on first-principles calculations, we predict five global stable molybdenum phosphorus compounds under the pressure range of 0-300 GPa. All of them display superconductivity with different transition temperatures. Meanwhile, we...
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