1998
DOI: 10.1063/1.122459
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Superconductor–normal–superconductor Josephson junctions fabricated by oxygen implantation into YBa2Cu3O7−δ

Abstract: We report Josephson junctions in YBa2Cu3O7−δ  films, fabricated by oxygen irradiation through a 50 nm wide slit in an implantation mask. After annealing the irradiated microbridges at 500 °C in an oxygen atmosphere, this process creates a homogeneous barrier region with a reduced but finite transition temperature, allowing Josephson coupling in a temperature window of ⩽15 K. Over the entire temperature range of Josephson coupling these junctions show resistively shunted junction behavior. The exponential depen… Show more

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Cited by 42 publications
(24 citation statements)
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“…Such an ideal behavior has not been reported in previous studies 4,5 . The period of the modulation corresponds to one flux quantum in the junction provided λ L is taken to be typical of thin films 11 (400 nm at 72K).…”
Section: /06/05mentioning
confidence: 46%
“…Such an ideal behavior has not been reported in previous studies 4,5 . The period of the modulation corresponds to one flux quantum in the junction provided λ L is taken to be typical of thin films 11 (400 nm at 72K).…”
Section: /06/05mentioning
confidence: 46%
“…The steep R(T) curve exhibited by the higher T c junction is typical for a barrier whose effective resistive length changes rapidly as a function of temperature: scattering of ions causes the barrier to have a graded distribution of T c s both along the length and thickness of the track [1,5]. Since they were on the same chip, both these devices received an identical implantation dose.…”
Section: (A)mentioning
confidence: 99%
“…However the FEBI technique is realistically limited to circuits consisting of fewer than 100 junctions and so alternative techniques will be required for large-scale circuit fabrication. Several groups have recently demonstrated junction formation by masked ion damage (MID) in which ions from a broad beam ion source locally damage regions of superconductor to form the junction barriers, while the remainder of the circuit is protected by a mask which absorbs the implanted ions [4][5][6]. Although MID has the advantage that junction barriers are formed by a parallel, rather than a serial technique (as is the case for FEBI), the difficulties of preparing successful mask structures have meant the progress to date has been relatively slow.…”
Section: Index Terms-superconducting Devices Nanotechnology Ybco Snmentioning
confidence: 99%
“…Experimental results reported so far include O þ , Ne þ and H þ ion irradiation with various masks [2][3][4]. The preliminary experimental results are promising, but the device performances are not satisfactory in general, and differ from one group to another.…”
Section: Introductionmentioning
confidence: 97%