Superjunction

Abstract

Power semiconductor devices control the energy flow in virtually every electric and electronic system. Most commonly recognized applications are: automotive, traction, consumer electronics, air conditioning, electric engines. The improvement in power devices results in improved power management circuits with increased efficiency. Reduced environmental pollution, reduced cost, reduced size, and longer battery life are only few of the advantages that derive from advancements in the design of power semiconductor devices. Dating from the invention of the tranistor, a continuous research and development activity, driven by the huge market request, provided new device concepts, advanced design techniques, and new materials that largely improved the performance of the power semiconductor devices. A big step towards the ideal device is the introduction of the SuperJunction (SJ) concept in 1997 with inherent drastic reduction of the ON state resistance and of the conduction losses for power devices. SJ is not an improvement due to the use of a new material. It is an improvement derived by an innovative design concept for the sustaining layer that, instead of exhibiting a one dimensional structure, is manufactured with a complex two or three dimensional structure. SJ design technique is therefore applicable to different power devices but requires a design approach that differs from the one used for conventional power devices.

Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars

“…The processing window is seen to further increase almost linearly as α decreases. One might presume a device of 90⁰ would achieve a higher VBD, in accordance with SJ theory [9]. However, it may been seen in Fig.…”

Static and Dynamic Effects of the Incomplete Ionization in Superjunction Devices

“…he invention of the SuperJunction (SJ) concept [1,2] and the advent of wide bandgap (WBG) semiconductors [3][4][5] have provided new opportunities to break the Silicon limit [6][7][8] and enhance the performance of power semiconductor devices. On one hand, the SJ consists in the replacement of the drift region with multiple uniformly doped p-type and n-type columns [6,9,10]. In the case of unipolar devices, this allows for a much higher doping concentrations of the pillars for a fixed breakdown voltage (when the charge compensation is maintained between the different pillars), and, for this specific reason, improves the trade-off between specific on-state resistance (Ron_spec) and the breakdown voltage (BV) [6].…”