Superjunction LDMOS With Dual Gate for Low On-Resistance and High Transconductance

Cao, Zhen; Jiao, Licheng

doi:10.1109/jeds.2020.3011929

Cited by 14 publications

(4 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fundamental properties of materials can be translated into device-level figures of merit (FOMs). The comparison of novel devices fabricated after 2015 (Silicon Super-Junctions MOSFETS [25], 4H-SiC MOSFETs [26] and GaN FETs [27]) with ideal limits based on one-dimensional p-n junctions [28] is useful to estimate the maturity of each technology and to evaluate the available room for improvement. For instance, the parameters related to high voltage operation and resistive power loss are well captured by the so-called Baliga FOM (B FOM ) [28], which is essentially a normalized breakdown voltage at on-state resistance parity for a unipolar device based on one-dimensional electrostatics.…”

Section: B Maturity Of Wbg Materials Technologiesmentioning

confidence: 99%

“…Commercial silicon devices already reach the socalled limit and, some specific device architectures such as super-junction (SJ) MOSFETs actually can surpass the "silicon limit" [25], [29], [30], because they exploit sophisticated three-dimensional electrostatics engineering, whereas the Baliga FOM is based on the assumption of basic one-dimensional p-n junctions. SiC is not far from the limit, but still has some room for improvement.…”

Section: B Maturity Of Wbg Materials Technologiesmentioning

confidence: 99%

See 1 more Smart Citation

Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

et al. 2021

View full text Add to dashboard Cite

The expansion of the electric vehicle market is driving the request for efficient and reliable power electronic systems for electric energy conversion and processing. The efficiency, size, and cost of a power system is strongly related to the performance of power semiconductor devices, where massive industrial investments and intense research efforts are being devoted to new wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN). The electrical and thermal properties of SiC and GaN enable the fabrication of semiconductor power devices with performance well beyond the limits of silicon. However, a massive migration of the power electronics industry towards WBG materials can be obtained only once the corresponding fabrication technology reaches a sufficient maturity and a competitive cost. In this paper, we present a perspective of power electronics based on WBG semiconductors, from fundamental material characteristics of SiC and GaN to their potential impacts on the power semiconductor device market. Some application cases are also presented, with specific benchmarks against a corresponding implementation realized with silicon devices, focusing on both achievable performance and system cost.

show abstract

Section: B Maturity Of Wbg Materials Technologiesmentioning

confidence: 99%

Section: B Maturity Of Wbg Materials Technologiesmentioning

confidence: 99%

Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

et al. 2021

View full text Add to dashboard Cite

show abstract

“…In literature, various device designs to improve RON and gm such as dual-gate, source-underlap, and adaptive RESURF and hybrid source techniques have been reported [26]- [28]. However, an in-depth understanding of the fundamental physics involved towards the onset of SCM as well as QS in the multiple RESURF (double, and triple) devices is rather limited.…”

Section: Introductionmentioning

confidence: 99%

Investigating the Correlation Between Space Charge Modulation and ON-State Breakdown in Multiple RESURF DeMOS Devices

Mishra¹,

Gupta

2022

IEEE Access

View full text Add to dashboard Cite

In this work, the ON-state performance of the drain-extended metal-oxide-semiconductor (DeMOS) device with multiple RESURF junctions in the drift region is explored. Although the additional RESURF implant offers a significant improvement in the breakdown voltage (VBD) and ON-resistance (RON) compared to the conventional DeMOS, it induces an early space charge modulation (SCM) initiated quasi-saturation (QS) effects and adversely impacts the ON-state breakdown of the device. Moreover, these devices are compared for a fixed breakdown voltage where a correlation between their analog/RF performance and QS effects is established. This work also presents and validates the design guideline for multiple RESURF devices that can alleviate the SCM/QS effects by 8% and improve the ON-state breakdown voltage by 35% compared to the standard device, thereby maximizing the ON-state performance of the device without compromising the OFF-state breakdown.INDEX TERMS Drain extended MOS (DeMOS), double RESURF, triple RESURF, space charge modulation (SCM), quasi-saturation (QS), ON-state breakdown.

show abstract

“…Fig.12compares the dynamic performance of the P/N SSTG SOI LDMOS and TG SOI LDMOS. The inset shows the switching circuit used in the simulation[22,23]. It can be seen from the gure that P/N SSTG SOI LDMOS has a faster turn-off speed.…”

mentioning

confidence: 99%

A Novel LDMOS with Ultralow Specific on-Resistance and Improved Switching Performance

Zeng

et al. 2021

Silicon

View full text Add to dashboard Cite

A stepped split triple-gate SOI LDMOS with P/N strip (P/N SSTG SOI LDMOS) is proposed, which has ultralow speci c on-resistance (R on,sp ) and low switching losses. The proposed device has a triple-gate (TG) and stepped split gates (SSGs). P strip, N-drift and oxide trench are alternately arranged in the Z direction. Meanwhile, the SSGs are located in the oxide trench of the N-drift region and are distributed in steps. Firstly, the TG increases the channel width (W ch ) and has the effect of modulating current distribution, resulting in lower R on,sp and higher transconductance (g m ). Secondly, the SSGs serve as the eld plate to assist the depletion of the N-drift region, increasing the optimal doping concentration of the N-drift region (N d-opt ) and further reducing the R on,sp . Moreover, the SSGs also have the effect of modulating the electric eld distribution to maintain a high breakdown voltage (BV). Meanwhile, gatedrain charge (Q GD ) and switching losses are reduced on account of the introduction of the SSGs. Thirdly, in the off-state, the P strip and SSGs multidimensional assisted depletion of the N-drift region, which greatly increases the N d-opt . The highly doped N-drift region provides a low-resistance path for the current, which also further reduces R on,sp . Compared with triple-gate (TG) SOI LDMOS with almost equal breakdown voltage, the R on,sp and Q GD of P/N SSTG SOI LDMOS are reduced by 62% and 63%, respectively.LDMOS is reduced by 63%, and the switching losses are signi cantly reduced. So the proposed device achieves an excellent tradeoff between R on,sp and Q GD . Besides, the proposed device is generally applied to medium and low rated voltages, substantially reducing power losses.

show abstract

Superjunction LDMOS With Dual Gate for Low On-Resistance and High Transconductance

Cited by 14 publications

References 27 publications

Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

Investigating the Correlation Between Space Charge Modulation and ON-State Breakdown in Multiple RESURF DeMOS Devices

A Novel LDMOS with Ultralow Specific on-Resistance and Improved Switching Performance

Contact Info

Product

Resources

About