Suppressed intermixing in InAlGaAs/ AlGaAs/GaAs and AlGaAs/GaAs quantum well heterostructures irradiated with a KrF excimer laser

Genest, Jonathan; Dubowski, Jan J.; Aimez, Vincent

doi:10.1007/s00339-007-4230-3

Cited by 13 publications

(11 citation statements)

References 18 publications

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“…At the same time, as the C content decreased with the pulse number, CA was found decreasing from 75 • to near 52 • , similarly to the effect of coating Si with thermal oxide (Tsu et al 1991). In our previous work, UV laser was successfully used to modify surface chemical composition of GaAs, InGaAs and InP irradiated in air (Dubowski et al 1999, Genest et al 2007, Genest et al 2008 and NH 3 (Wrobel et al 1998). We found that UV laser irradiation of InP in deionized (DI) water reduces the presence of surface oxides and carbides, while it enhances adsorption of water on the surface of a semiconductor (Liu et al 2013).…”

Section: Introductionmentioning

confidence: 78%

Selective areain situconversion of Si (0 0 1) hydrophobic to hydrophilic surface by excimer laser irradiation in hydrogen peroxide

Liu¹,

Huang²,

Dubowski³

2014

J. Phys. D: Appl. Phys.

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We report on a method of rapid conversion of a hydrophobic to hydrophilic state of an Si (0 0 1) surface irradiated with a relatively low number of pulses of an excimer laser. Hydrophilic Si (0 0 1), characterized by the surface contact angle (CA) of near 15 • , is fabricated following irradiation with either KrF or ArF excimer lasers of hydrophobic samples (CA ∼ 75 •) immersed in a 0.01% H 2 O 2 /H 2 O solution. The chemical and structural analysis carried with x-ray photoelectron spectroscopy and atomic force microscopy measurements confirmed the formation of OH-terminated Si (0 0 1) surface with no detectable change in the surface morphology of the laser-irradiated material. To investigate the efficiency of this laser-induced hydrophilization process, we demonstrate a selective area immobilization of biotin-conjugated fluorescein-stained nanospheres outside of the laser-irradiated area. The results demonstrate the potential of the method for the fabrication of biosensing architectures and advancements of the Si-based microfluidic device technology.

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Section: Introductionmentioning

confidence: 78%

Selective areain situconversion of Si (0 0 1) hydrophobic to hydrophilic surface by excimer laser irradiation in hydrogen peroxide

Liu¹,

Huang²,

Dubowski³

2014

J. Phys. D: Appl. Phys.

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“…indium oxides and gallium oxides, have significantly increased in the excimer laser irradiated sites. 6,8 From secondary ion mass spectroscopy (SIMS) measurements, it has been reported that on InP based QW structures, In and Ga atoms are easier to outdiffuse to the SiO 2-x layer and create V interstitials that enhance interdiffusion between barrier and well materials during RTA. 9 XPS depth profiling results also demonstrated that the total concentration of In and Ga atoms outdiffusing to the SiO 2 layer could be at around 0.5 at.…”

Section: Introductionmentioning

confidence: 99%

“…3 We have been investigating the ability of UV lasers to modify surface properties of III-V quantum well (QW) microstructures and generate defects capable of promoting the process of QW intermixing (QWI). [4][5][6] Excimer lasers are known to modify the surface chemical composition of InP-and GaAs-based QW microstructures irradiated in air and lead to a significantly enhanced interdiffusion between the well and barrier materials during high temperature rapid thermal annealing (RTA). 6-8 X-ray photoelectron spectroscopy (XPS) measurements have demonstrated that the amount of oxides, e.g.…”

Section: Introductionmentioning

confidence: 99%

Surface and interface study of SiO2-x coated InP/InGaAs/InGaAsP semiconductor laser microstructures processed in the soft KrF laser irradiation regime

2011

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The ability of a UV laser to modify surface properties of quantum well (QW) microstructures that would lead to formation of a "defective layer" is of particular interest to the process of QW intermixing (QWI). We discuss the results of surface and interface study of InGaAs/InGaAsP QW microstructures capped with InP and a 243-nm thick layer of SiO 2-x that were irradiated with a KrF excimer laser delivering up to 25 pulses at 124 mJ/cm 2 . The optical quality of SiO 2 films remains relatively unaffected by the irradiation with the KrF laser operating in the investigated window of parameters. The x-ray photoelectron spectroscopy experiments point out the negligible role of SiO 2-x in out-diffusion of matrix atoms that would enhance the QWI process. However, the KrF laser was found to significantly modify the interface between UV transparent SiO 2-x and the InP layer. Our results suggest that the resulting layer of the altered material promotes out-diffusion of atoms and intermixing in the QW region.

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“…In our previous research, UV laser irradiation of III-V semiconductors in air [18][19][20] and NH 3 21 was successfully used to alter the surface chemical composition of GaAs, InGaAs and InP. We established that UV laser irradiation of III-V semiconductors in deionized (DI) water decreases surface oxides and carbides, while the water adsorbed on semiconductor surface increases 22 .…”

Section: Introductionmentioning

confidence: 99%

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Liu

Moumanis

Dubowski

2015

JoVE

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The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H 2 O 2 /H 2 O solution did not show measurable change in their initial contact angle (CA) ~75°. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H 2 O 2 /H 2 O solution at 250 and 65 mJ/cm 2 , respectively, has decreased the CA to near 15°, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer's surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH 3 OH) using ArF laser operating at pulse fluence of 65 mJ/cm 2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103°. The XPS results indicate ArF laser induced formation of Si-(OCH 3 ) x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH 3 radicals. Video LinkThe video component of this article can be found at

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Suppressed intermixing in InAlGaAs/ AlGaAs/GaAs and AlGaAs/GaAs quantum well heterostructures irradiated with a KrF excimer laser

Cited by 13 publications

References 18 publications

Selective areain situconversion of Si (0 0 1) hydrophobic to hydrophilic surface by excimer laser irradiation in hydrogen peroxide

Selective areain situconversion of Si (0 0 1) hydrophobic to hydrophilic surface by excimer laser irradiation in hydrogen peroxide

Surface and interface study of SiO2-x coated InP/InGaAs/InGaAsP semiconductor laser microstructures processed in the soft KrF laser irradiation regime

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

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