Suppressed oxygen vacancy in pristine/N doped ZnO and improved ZnO homogenous p-n junction performance by H2O2 oxidant

Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga2O3 Films through Plasma-Enhanced Technology

“…25−27 Furthermore, the oxygen vacancy defects (V O ) on the surface of Ga 2 O 3 cause electrons to be transported through tunneling puncture effects that result in the high reverse leakage current of transistors. 28−31 Kim et al 32,33 utilized this strategy by introducing N into ZnO, which hybridized N 2p orbitals with the O 2p orbitals and interacted with metal d orbital electrons to fundamentally alter the band structure near the valence band of ZnO, thereby suppressing the PPC effect. Additionally, Ye et al 34 reported that GaON films effectively improved the PPC effect of the photodetector.…”

“…Kim et al , utilized this strategy by introducing N into ZnO, which hybridized N 2p orbitals with the O 2p orbitals and interacted with metal d orbital electrons to fundamentally alter the band structure near the valence band of ZnO, thereby suppressing the PPC effect. Additionally, Ye et al reported that GaON films effectively improved the PPC effect of the photodetector.…”

Characteristics of ALD‐ZnO Thin Film Transistor Using H2O and H2O2 as Oxygen Sources

“…On the other hand, as Wang et al suggested increasing the concentration of H 2 O 2 in the H 2 O/H 2 O 2 oxidizer can alter the wedge-like and columnar structure grain growth with nonuniform surface morphology to just columnar structure grain growth with uniform morphology, which results in lower roughness values. [28] The top-view SEM images show that the H 2 O-ZnO thin films have wedge-like crystal features, while the H 2 O 2 -ZnO thin films show columnar crystal growth. The wedge-like and columnar features correspond to the (100) direction (a-axis) and ( 002) direction (c-axis).…”

Regulating the rectifying effect of zigzag germanium selenide nanoribbons by selective edge decoration

“…The rectification behavior in nanoscale devices has attracted continuous research interest due to its extensive utilization in logic circuits, and the different rectification mechanism compared with regular semiconductor diodes [1,2]. Although the rectification behavior has been observed in the PN junction [3][4][5][6], field-effect transistors [7][8][9], and various molecular devices [10][11][12], the relatively large * Author to whom any correspondence should be addressed. size of PN junction-based rectifiers and the low working speed of field-effect transistors limit their applications in nanoelectronics devices [13,14].…”