Suppression of 3C-Inclusion Formation during Growth of  4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

Masumoto, Katashi; Asamizu, Hirokuni; Tamura, Kentaro; Kudou, Chiaki; Nishio, Johji; Kojima, Kazutoshi; Ohno, Toshiyuki; Okumura, Hajime

doi:10.3390/ma7107010

Cited by 6 publications

(3 citation statements)

References 26 publications

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“…shows an SEM image of the same sample. A set of 9 nm steps with 300 nm spacing were observed, indicating the occurrence of step bunching, similar to what has been reported for CVD growth at higher temperatures [10]. A separate test revealed that the hydrogen etch causes the step bunching, while the steps are preserved during the subsequent growth.…”

Section: Epitaxial Growth Descriptionsupporting

confidence: 84%

Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

Zeghbroeck

Robinson

Brow

2018

MSF

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Hot filament CVD (HFCVD) growth of undoped 4H-SiC epitaxial layers on 100 mm n-type 4o-off 4H-SiC substrates is presented as an alternate growth method for the first time. High quality crystalline material with a low density of polytype inclusions has been demonstrated and characterized with optical micrographs, SEM imaging, micro-Raman measurements, and high resolution XRD. Typical growth rates are ~3 μm/hour. Double rocking omega scans revealed diffraction peaks with a FWHM of 23 arcsec.

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Section: Epitaxial Growth Descriptionsupporting

confidence: 84%

Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

Zeghbroeck

Robinson

Brow

2018

MSF

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“…As reported for Si-face epitaxial growth with a low off-angle of less than 1°, the 3C inclusion density increases as the C/Si ratio increases because 3C-SiC nucleation occurs due to the short diffusion length of adatoms and the wide terrace width caused by step bunching generation. 11,21,22) Compared with the reported Si-face epitaxial growth, the 3C-inclusion density on the C-face did not increase as the C/Si ratio increased. With C-face epitaxial growth, we consider that 3C inclusions, which were attributed to 3C-SiC nucleation occurred by the wide terrace width, were not generated since the terrace width was not increased by the suppression of step bunching because of its lower surface energy compared with a Si-face.…”

Section: Discussion Of 3c Inclusion-density Reductionmentioning

confidence: 75%

Homoepitaxial growth and investigation of stacking faults of 4H-SiC C-face epitaxial layers with a 1° off-angle

Masumoto¹,

Asamizu²,

Tamura³

et al. 2015

Jpn. J. Appl. Phys.

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We grew epitaxial layers on 4H-SiC C-face substrates with a 1°off-angle, and discussed important factors related to stacking fault (SF) density reduction by investigating the causes of SFs. Three types of SFs were generated, namely 3C inclusions, 8H-SFs and ð3; 5Þ-SFs. The 3C inclusions were caused by 3C-SiC particles, which were present on the substrates before epitaxial growth, or which had fallen onto the substrates during epitaxial growth from the inside walls of a chemical vapor deposition reactor. The 3C-inclusion density decreased when the in-situ H 2 etching depth exceeded 0.4 µm because the 3C-SiC particles, which were present on substrates before epitaxial growth, were removed. For 8H-SFs and ð3; 5Þ-SFs, high dislocation density areas on the substrates rather than the dislocations themselves cause these SFs. To reduce the density of these SFs, it is important to suppress generation of the high dislocation density areas on the substrates.

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“…[1][2][3][4] In the case of epitaxially grown substrates, offorientation is employed to prevent the poly-type inclusion phenomenon during epitaxial growth for the low-doped layer. 5,6) However, the off-orientation of 4H-SiC causes serious surface scattering for electrons at the interface between 4H-SiC and the gate insulator in the lateral MOSFETs. Although several studies to suppress poly-type inclusion and obtain a smooth surface during on-axis or on-axis-like (0.1-0.4°) epitaxial growth of SiC have been reported, [6][7][8][9][10] the uniform formation of 4H-SiC on epitaxial layers with reduced off-orientation still remains a problem.…”

Section: Introductionmentioning

confidence: 99%

High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates

Seok

Kim

Moon

et al. 2018

Jpn. J. Appl. Phys.

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Lateral double-implanted MOSFETs (LDIMOSFETs) fabricated on on-axis high-purity semi-insulating (HPSI) 4H-SiC substrates with gate field plates have been demonstrated for the enhancement of reverse blocking capability. The effects of gate field plate on LDIMOSFET were analyzed by simulation and experimental methods. The electric field concentration at the gate edge was successfully suppressed by a gate field plate. A high breakdown voltage of 934 V and a figure of merit of 14.6 MW/cm 2 were achieved at L FP of 2 µm and L drift of 15 µm, while those of the conventional device without a gate field plate were 744 V and 13.3 MW/cm 2 , respectively. Also, the fabricated device shows stable blocking characteristics at a high temperature of 250 °C. The drain leakage was increased by only 22% at 250 °C compared with that at room temperature.

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Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

Cited by 6 publications

References 26 publications

Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

Homoepitaxial growth and investigation of stacking faults of 4H-SiC C-face epitaxial layers with a 1° off-angle

High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates

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