Suppression of current dispersion in AlGaN/GaN MISHFETs with in-situ AlN passivation layer

Lee, Jun-Hyeok; Kim, Jeong-Gil; Kang, Hoyoul; Lee, Jung‐Hee

doi:10.1016/j.sse.2021.107984

Cited by 2 publications

(1 citation statement)

References 29 publications

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“…GaN-based devices, such as GaN/AlGaN high electron mobility transistors (HEMT) and GaN diodes, have been widely used as power devices because of their high breakdown voltage [ 1 , 2 , 3 ] and operation frequency [ 4 , 5 , 6 ]. Although GaN devices have many advantages, they are still suffering from some problems such as short channel effect [ 7 , 8 , 9 ] and current collapse effect [ 10 , 11 , 12 ]. To solve these problems, some researchers proposed double channel GaN HEMTs [ 13 , 14 , 15 , 16 , 17 , 18 ], which contain two GaN/AlGaN heterojunction conductive channels.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

et al. 2022

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A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 °C to 850 °C. The results show that the minimum specific contact resistance is 2.58 × 10−7 Ω·cm2 at the annealing temperature of 750 °C, which is three to four times lower than the surface contact mode. Scanning electron microscope (SEM), energy dispersive spectrometer (EDS), and atomic force microscope (AFM) were carried out for the analysis of the morphology, element composition, and the height fluctuation at the contact edge. With the increase in the annealing temperature, the specific contact resistance decreases due to the alloying of electrodes and the raised number of N vacancies. However, when the annealing temperature exceeds 800 °C, the state of the stress in the electrode films transforms from compressive stress to tensile stress. Besides, the volume expansion of metal electrode film and the increase in the roughness at the contact edge leads to the degradation of the side ohmic contact characteristics.

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Section: Introductionmentioning

confidence: 99%

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

et al. 2022

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Development of Diamond Device-Level Heat Spreader for the Advancement of GaN HEMT Power and RF Electronics

2023

IEEE Trans. Device Mater. Relib.

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Suppression of current dispersion in AlGaN/GaN MISHFETs with in-situ AlN passivation layer

Cited by 2 publications

References 29 publications

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

Development of Diamond Device-Level Heat Spreader for the Advancement of GaN HEMT Power and RF Electronics

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