2001
DOI: 10.1063/1.1394172
|View full text |Cite
|
Sign up to set email alerts
|

Suppression of lateral fluctuations in CdSe-based quantum wells

Abstract: Determination of the indices of refraction of molecular-beam-epitaxy-grown ZnSe/ZnCdSe multiple-quantum-well structures J. Growth and characterization of BeCdSe alloys and BeCdSe/ZnCdMgSe quantum wells on InP substrates Appl. Phys. Lett. 78, 2473 (2001); 10.1063/1.1368192 Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substrates

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
7
0

Year Published

2002
2002
2015
2015

Publication Types

Select...
4
2

Relationship

1
5

Authors

Journals

citations
Cited by 18 publications
(7 citation statements)
references
References 17 publications
0
7
0
Order By: Relevance
“…Conclusions Vertically aligned stacks of CdSe based islands were obtained using a modified MBE technique [6]. The results show that growth conditions can be found for CdSe based QIs which give similarly good results as in the III-V system InAs/GaAs.…”
mentioning
confidence: 69%
See 2 more Smart Citations
“…Conclusions Vertically aligned stacks of CdSe based islands were obtained using a modified MBE technique [6]. The results show that growth conditions can be found for CdSe based QIs which give similarly good results as in the III-V system InAs/GaAs.…”
mentioning
confidence: 69%
“…Previously, temperature sequences, like those used in low temperature atomic layer epitaxy [4,5], were employed to change the thermodynamic conditions in favor of island formation. Recently we introduced a new growth technique which employs a CdS compound source instead of the conventional Cd elemental source [6]. This modification to standard MBE allows the growth of highly correlated vertical CdSe quantum island stacks (QIS) with similar quality as in the InAs/GaAs system and makes the complex sequential growth techniques obsolete.…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…As a result, the regions of nanometer size appear in the QW, in which the content of the narrow-gap solution component essentially exceeds the average value in QW. Depending on the growth conditions and/or post-growth treatment these regions can have the form of planar islands (called also 2D discs), [1][2][3][4] or 3D dot-like structures (see, for example, Ref. 5) or both.…”
Section: Introductionmentioning
confidence: 99%
“…The main experimental results for these systems obtained by different research groups are in fairly good agreement. [1][2][3][4][5][6] Since most epitaxial growth techniques are essentially of the nonequilibrium type, the structural characteristics of QWs in particular cases strongly depend on the growth conditions. We studied the epitaxial samples grown by (i) the MBE technique with a CdS compound as a Cd source and an elemental Se source, 1 (ii) conventional MBE, 2 and (iii) by multi-cycle migration enhanced epitaxy deposition of CdSe (with less than 0.5 ML per cycle) in ZnSe matrices with the different growth interruption times after each Cd and Se pulses.…”
Section: Introductionmentioning
confidence: 99%