Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing

Ku, Y. H.; Lee, S. K.; Shih, D. K.; Kwong, D. L.; Lee, C.-O.; Yeargain, J.R.

doi:10.1063/1.99643

Cited by 15 publications

(5 citation statements)

References 5 publications

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“…At high temperatures, where entropy dictates that the impurities should "evaporate" from the boundaries, the activation energy equals the value for grain boundary diffusion. That phenomenon is prevented [106] by annealing in nitrogen, seemingly because the small interstitial nitrogen atoms diffuse rapidly in the grain boundaries where they successfully block any subsequent diffusion of Si atoms. [103] In the present case of the C49 to C54 transformation of TiSi 2 in thin films, available data are unfortunately limited to a very narrow range of temperatures (30 K in the most extensive study [92] ), so that we do not have any knowledge of its behavior in low, high, or intermediate temperatures.…”

Section: Titanium Disilicide Activation Energy For the Motion Of Thementioning

confidence: 99%

Reactive Phase Formation

d’Heurle

Lavoie

Gas

et al. 2005

Diffusion Processes in Advanced Technological Materials

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Section: Titanium Disilicide Activation Energy For the Motion Of Thementioning

confidence: 99%

Reactive Phase Formation

d’Heurle

Lavoie

Gas

et al. 2005

Diffusion Processes in Advanced Technological Materials

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“…We think therefore that this new LSAS process could serve as an attractive and competitive alternative to the SALICIDE process. 5 . REFERENCES…”

Section: Discussionmentioning

confidence: 95%

<title>Self-aligned synthesis of titanium silicide by multipulse excimer laser irradiation</title>

Crăciun

Crǎciun

Mihăilescu

et al. 1991

Advanced Techniques for Integrated Circuit Processing

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We present (report) a new type of titanium suicide self-aligned synthesis based upon excimer laser irradiation. This new process relaxes the requirements for ambient atmosphere control and suppresses the unwanted lateral growth of the silicide. . INTRODUCTIONThe development of the very large scale integration (VLSI) circuits requires new materials with improved performances and higher reliability to be used for gate electrodes or interconnection lines. The suicides of refractory metals were shown to be an appropriate choice for such applications1.One important advantage of these materials is the self-aligned manner of synthesis. The process called as SALICIDE is based upon a selective chemical etching causing the removal of the unreacted metal only, leaving unperturbed the suicide. However, several difficulties were found to be associated with the SAILICIDE process among which we mention the following ones: i) A strict control of the ambient atmosphere is required to the view of avoiding the reaction of the refractory metal with the oxygen2'3. ii) An important lateral growth6 or bridging of suicides is noticed.We report herewith a new method for the synthesis of self-aligned suicides which is based upon a mechanism differing of the SALICIDE process. To this pur pose we have exploited some peculiarities of the high power excimer laser irradiation which was showing to cause the vaporization of the metal deposited on 5102 only. This laser process also fulfils the requirements of a low thermal budget and of a high-purity of the synthesised layers, fundamental to VLSI technologies. As an illustrative examplification we refer to the titanium silicide synthesisthe compound the most intensively studied during recent years26. 2. EXPERIMENTAL DETAILS nrn-type (111)Si wafers with a resistivity of 5-8 flcm were employed in our experiments. The wafers were first oxidized to form a 250 nm thickness layer of Si02. Then, windows of 100 im or 1 mm diameter were opened through the oxide down to the single-crystalline Si substrate. A Ti layer of 150 nm thickness was then SPIE Vol. 1392 Advanced Techniques for Integrated Circuit Processing (1990) / 625 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/27/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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“…The various methods that have been attempted include pre-amorphization of Si by Xe 7 and As, 8 and implantation through metal. 9 All the above methods succeeded in lowering the transformation temperature by 50-100°C. In addition, thin silicide films of ¾30 nm are also preferred in sub-quarter micron technology, where a shallow junction (¾100 nm) is applied.…”

Section: Introductionmentioning

confidence: 97%

Laser-induced formation of titanium silicides

Chen

Shen

Chen

et al. 1999

Surf. Interface Anal.

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In this article, we report on the laser‐induced formation of both C49 and C54 TiSi2 films with fine grains using Q‐switched Nd : YAG laser irradiation from Ti/Si samples. The films formed were characterized with micro‐Raman spectroscopy, high‐resolution transmission electron microscopy, energy‐dispersive spectrometry and atomic force microscopy. The TiSi2 films synthesized are single‐phased and thin, with fine grains and a smooth film/substrate interface on the atomic scale. The process is likely to proceed via a solid‐state reaction rather than liquid‐phase intermixing. Our results demonstrate the unique advantages of a laser annealing technique and its potential in deep submicron semiconductor technology. Copyright © 1999 John Wiley & Sons, Ltd.

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Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing

Cited by 15 publications

References 5 publications

Reactive Phase Formation

Reactive Phase Formation

<title>Self-aligned synthesis of titanium silicide by multipulse excimer laser irradiation</title>

Laser-induced formation of titanium silicides

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