Since 2002, we have been developing a carbon dioxide (CO 2 ) laser-produced tin (Sn) plasma (LPP) extreme ultraviolet (EUV) light source, which is the most promising solution because of the 13.5 nm wavelength high power (>200 W) light source for high volume manufacturing. EUV lithography is used for its high efficiency, power scalability, and spatial freedom around plasma. We believe that the LPP scheme is the most feasible candidate for the EUV light source for industrial use. We have several engineering data from our test tools, which include 93% Sn ionization rate, 98% Sn debris mitigation by a magnetic field, and 68% CO 2 laser energy absorption rate. The way of dispersion of Sn by prepulse laser is key to improve conversion efficiency (CE). We focus on prepulsed laser pulsed duration. When we have optimized pulse duration from nanosecond to picosecond, we have obtained maximum 4.7% CE