Dopants are typically added to semiconductors or functional oxides to substitute specific atomic sites and thereby generate electronic and/or ionic charges. In multilayered ceramic capacitors (MLCCs), various dopants are co-doped in ferroelectric BaTiO3 thin films, with each dopant substituting a specific atomic site of BaTiO3 for specific function. In particular, rare-earth elements such as Dy, which have a formal ionic charge of 3+, can act as either electronic donor or acceptor depending on the doping sites. The unique capability of Dy to occupy both Ba (A-site) and Ti (B-site) of BaTiO3, known for its amphoteric behavior, plays a crucial role in the charge transport, which in turn affects the leakage current characteristics governing the reliability of MLCCs. Here we show that the site occupancy of the amphoteric dopant Dy in BaTiO3 can be determined unambiguously through atomic-scale chemical imaging using scanning transmission electron microscopy (STEM) energy dispersive X-ray spectroscopy (EDS). Three types of MLCC devices were investigated, which were made with different BaTiO3 powders synthesized by hydrothermal, co-precipitate, and solid-state reaction methods. Quantitative analysis of the A- and B-site occupancy of 1.4 at% Dy in each sample was systematically conducted using atomic-resolution STEM-EDS. The measured X-ray counts were interpreted quantitatively with the aid of EDS simulation that takes into account the electron channeling effects. The A/B-site occupancy determined for the three samples conforms with their bulk device characteristics with high confidence. This study paves the way for atomic-scale dopant analysis that bridges the bulk characteristics of electronic devices, which helps establish a strategy for the design of doping materials and their processes.