“…Recently, various materials such as aluminum nitride (AlN) [11,12], gallium arsenide (GaAs) [13,14], gallium phosphide (GaP) [15,16], silicon [17,18], and lithium niobate Photonics 2022, 9, 12 2 of 14 (LN) [19,20] have been adopted for AOM. Among them, LN is the most promising candidate especially for the thin-film LN (TFLN) or LN-on-insulator (LNOI) owing to its wide transparent window (from 400 nm to 5 µm), high refractive index contrast (∆n > 0.7), large piezoelectric, electro-optic, photo-elastic, and nonlinear coefficients, as well as stable physical and chemical properties [1,[19][20][21][22][23][24].…”