Surface acoustic wave-based ultraviolet photodetectors: a review

Zhang, Yi; Cai, Yao; Zhou, Jie; Xie, Ying; Xu, Qinwen; Zou, Yang; Guo, Shishang; Xu, Hongxing; Sun, Cheng; Liu, Sheng

doi:10.1016/j.scib.2019.12.001

Cited by 41 publications

(22 citation statements)

References 119 publications

(157 reference statements)

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“…As can be discerned, there was an increase of 20% in 2018 and 26% in 2020 and 2021. This growth was mainly due to the non-polar growth direction, providing solutions to overcoming piezoelectric and spontaneous polarization and photodetection application [9,17,83].…”

Section: Annual Scientific Productionmentioning

confidence: 99%

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

et al. 2022

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Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nitride-based optoelectronics have gained huge attention due to the piezoelectric and spontaneous polarization effect–induced quantum confined-stark effect being eliminated. In turn, non-polar gallium nitride-based photodetectors portray higher efficiency and faster response compared to the polar growth direction. To date, however, a systematic literature review of non-polar gallium nitride-based photodetectors has yet to be demonstrated. Hence, the objective of this systematic literature review is to critically analyze the data related to non-polar gallium nitride-based photodetectors. Based on the pool of literature, three categories are introduced, namely, growth and fabrication, electrical properties, and structural, morphological, and optical properties. In addition, bibliometric analysis, a precise open-source tool, was used to conduct a comprehensive science mapping analysis of non-polar gallium nitride-based photodetectors. Finally, challenges, motivations, and future opportunities of non-polar gallium nitride-based photodetectors are presented. The future opportunities of non-polar GaN-based photodetectors in terms of growth conditions, fabrication, and characterization are also presented. This systematic literature review can provide initial reading material for researchers and industries working on non-polar gallium nitride-based photodetectors.

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Section: Annual Scientific Productionmentioning

confidence: 99%

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

et al. 2022

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“…Aluminum nitride (AlN) possesses useful mechanical (elastic modulus-320-330 GPa; hardness 1100 kg/mm 2 ), electrophysical (breakdown field-1.2-1.8 × 10 6 V/cm; mobility of electrons/holes-135/14 cm 2 /V•s; large energy band gap-6.13-6.23 eV; high resistivity-10 15 Ω•cm), and thermochemical properties (high thermal conductivity-140-180 W/m•K; coefficient of thermal expansion-4.2-5.3 × 10 −6 • C −1 ; high melting point-~2200 • C) that enable its use as a material for various electronic devices: acoustic resonators (with the high surface acoustic wave velocity of 12,000 m/s), piezoelectric elements, insulators with a high dielectric constant, and a microelectromechanical system (MEMS) [1][2][3][4][5][6][7][8]. Due to its piezoelectric and pyroelectric parameters, such as the piezoelectric coefficients (e 15 = −0.33 ~−0.48 C/m 2 , e 31 = −0.38 ~−0.82 C/m 2 , e 33 = 1.26-2.1 C/m 2 and d 33 = 4-6 pC/N) and the relative permittivity coefficient (ε 11 = ε 22 = 9, ε 33 = 11), aluminum nitride is used in optomechanical and electroacoustic devices, phonon crystals, and nonlinear optics [8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates

et al. 2022

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In this paper, the influence of surface modification on the characteristics and properties of AlN thin films on Si and glass-ceramics substrates is investigated. The surface modification was made at various parameters of argon cluster ions. By using XRD and Raman spectroscopy, it was shown that the obtained AlN films have a hexagonal structure with a characteristic direction of texturing along the c axis and slight deviations from it. A comparison of the AlN surface morphology obtained by atomic force microscopy before and after cluster processing was demonstrated. This demonstrated that the cluster ions with low energy per atom (E/N = 10 eV/atom) have a high efficiency of surface smoothing. A decrease in the intensity of the Raman peaks and an increase in their full-width after bombardment with cluster ions were found, which may be caused by a change in the physicochemical state of the surface. The optical properties, the quality of the boundaries, and the distribution map of the thickness of the functional layer of AlN were investigated by the methods of spectral and spatial resolution ellipsometry. By using the cross-sectional SEM, the direction of crystallite texturing was demonstrated. The influence of argon cluster ion bombardment on the stoichiometry of samples was analyzed by EDX spectroscopy. The results obtained demonstrate the efficiency of the cluster ion smoothing of polycrystalline thin films for microelectronics, particularly when creating surface acoustic wave resonators.

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“…Photodetectors that convert light into electrical or other types of signals have been widely used for various applications, such as astronomical detection, medical imaging, flame detection, memristors, medical imaging, and ozone sensing [1][2][3][4][5][6][7][8]. Among these, the most common and widely used is the photoelectric detector, which is based on the principle of converting light or electromagnetic radiation into electrical currents [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Bandgap tunable preparation of GaS nanosheets and their application in photoelectrochemical photodetectors

You

Zhu

Peng

et al. 2022

Sci. China Technol. Sci.

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Bandgap engineering of two-dimensional (2D) materials is essential for the design of photoelectrochemical (PEC) devices. Gallium(II) sulfide (GaS), a layered semiconductor material with a direct bandgap of approximately 3.05 eV, has recently gained extensive attention owing to its unique photoresponse property. However, its bandgap tunability relative to the number of layers has not been experimentally confirmed; thus, the effect of bandgap on the photoresponse has not been explored yet. Herein, fewlayered GaS nanosheets (Ns) are prepared using a simple liquid-phase exfoliation (LPE) approach. After centrifuging at different speeds, GaS Ns with defined layers are obtained, which enable verification of the tunable bandgap from 2.02 to 3.15 eV. When applied as a PEC-type photodetector, the responsivity of the photodetector is 4.77 mA W −1 and 33.7 μA W −1 under bias voltages of 0.6 and 0 V, respectively. Theoretical models of the electronic structure suggest that a reduction in the number of layers, leading to a decrease of the effective mass at the valence band maximum (VBM), can enhance the carrier mobility of GaS Ns. This results in high photocurrents and indicates that 2D GaS Ns are ideal materials for future high-performance optoelectronic systems.

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Surface acoustic wave-based ultraviolet photodetectors: a review

Cited by 41 publications

References 119 publications

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates

Bandgap tunable preparation of GaS nanosheets and their application in photoelectrochemical photodetectors

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